Part Details for HGT1S7N60C3D by Harris Semiconductor
Overview of HGT1S7N60C3D by Harris Semiconductor
- Distributor Offerings: (1 listing)
- Number of FFF Equivalents: (1 cross)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (10 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Applications
Energy and Power Systems
Medical Imaging
Robotics and Drones
Price & Stock for HGT1S7N60C3D
Part # | Distributor | Description | Stock | Price | Buy | |
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Rochester Electronics | HGT1S7N60 - N-Channel Insulated Gate Bipolar Transistor ' RoHS: Not Compliant Status: Obsolete Min Qty: 1 | 3882 |
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$0.8413 / $0.9898 | Buy Now |
Part Details for HGT1S7N60C3D
HGT1S7N60C3D CAD Models
HGT1S7N60C3D Part Data Attributes:
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HGT1S7N60C3D
Harris Semiconductor
Buy Now
Datasheet
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Compare Parts:
HGT1S7N60C3D
Harris Semiconductor
Insulated Gate Bipolar Transistor, 14A I(C), 600V V(BR)CES, N-Channel, TO-262AA
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Rohs Code | No | |
Part Life Cycle Code | Obsolete | |
Ihs Manufacturer | HARRIS SEMICONDUCTOR | |
Reach Compliance Code | unknown | |
ECCN Code | EAR99 | |
HTS Code | 8541.29.00.95 | |
Additional Feature | LOW CONDUCTION LOSS | |
Case Connection | COLLECTOR | |
Collector Current-Max (IC) | 14 A | |
Collector-Emitter Voltage-Max | 600 V | |
Configuration | SINGLE WITH BUILT-IN DIODE | |
Fall Time-Max (tf) | 275 ns | |
Gate-Emitter Thr Voltage-Max | 6 V | |
Gate-Emitter Voltage-Max | 20 V | |
JEDEC-95 Code | TO-262AA | |
JESD-30 Code | R-PSIP-T3 | |
JESD-609 Code | e0 | |
Number of Elements | 1 | |
Number of Terminals | 3 | |
Operating Temperature-Max | 150 °C | |
Package Body Material | PLASTIC/EPOXY | |
Package Shape | RECTANGULAR | |
Package Style | IN-LINE | |
Polarity/Channel Type | N-CHANNEL | |
Power Dissipation Ambient-Max | 60 W | |
Power Dissipation-Max (Abs) | 60 W | |
Qualification Status | Not Qualified | |
Surface Mount | NO | |
Terminal Finish | TIN LEAD | |
Terminal Form | THROUGH-HOLE | |
Terminal Position | SINGLE | |
Transistor Application | MOTOR CONTROL | |
Transistor Element Material | SILICON | |
Turn-off Time-Max (toff) | 400 ns | |
Turn-off Time-Nom (toff) | 350 ns | |
Turn-on Time-Nom (ton) | 8.5 ns | |
VCEsat-Max | 2 V |
Alternate Parts for HGT1S7N60C3D
This table gives cross-reference parts and alternative options found for HGT1S7N60C3D. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of HGT1S7N60C3D, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
Part Number | Description | Manufacturer | Compare |
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HGT1S7N60C3D | TRANSISTOR,IGBT,N-CHAN+DIODE,600V V(BR)CES,14A I(C),TO-262AA | Intersil Corporation | HGT1S7N60C3D vs HGT1S7N60C3D |