Part Details for HGT1S5N120BNS by Fairchild Semiconductor Corporation
Overview of HGT1S5N120BNS by Fairchild Semiconductor Corporation
- Distributor Offerings: (0 listings)
- Number of FFF Equivalents: (2 replacements)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (10 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
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Applications
Consumer Electronics
Energy and Power Systems
Renewable Energy
Part Details for HGT1S5N120BNS
HGT1S5N120BNS CAD Models
HGT1S5N120BNS Part Data Attributes
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HGT1S5N120BNS
Fairchild Semiconductor Corporation
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Datasheet
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HGT1S5N120BNS
Fairchild Semiconductor Corporation
Insulated Gate Bipolar Transistor, 21A I(C), 1200V V(BR)CES, N-Channel, TO-263AB,
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| Rohs Code | No | |
| Part Life Cycle Code | Obsolete | |
| Ihs Manufacturer | FAIRCHILD SEMICONDUCTOR CORP | |
| Package Description | SMALL OUTLINE, R-PSSO-G2 | |
| Reach Compliance Code | compliant | |
| ECCN Code | EAR99 | |
| Additional Feature | LOW CONDUCTION LOSS, AVALANCHE RATED | |
| Case Connection | COLLECTOR | |
| Collector Current-Max (IC) | 21 A | |
| Collector-Emitter Voltage-Max | 1200 V | |
| Configuration | SINGLE | |
| Fall Time-Max (tf) | 200 ns | |
| Gate-Emitter Voltage-Max | 20 V | |
| JEDEC-95 Code | TO-263AB | |
| JESD-30 Code | R-PSSO-G2 | |
| JESD-609 Code | e0 | |
| Number of Elements | 1 | |
| Number of Terminals | 2 | |
| Operating Temperature-Max | 150 °C | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | RECTANGULAR | |
| Package Style | SMALL OUTLINE | |
| Polarity/Channel Type | N-CHANNEL | |
| Power Dissipation-Max (Abs) | 167 W | |
| Qualification Status | Not Qualified | |
| Rise Time-Max (tr) | 20 ns | |
| Surface Mount | YES | |
| Terminal Finish | TIN LEAD | |
| Terminal Form | GULL WING | |
| Terminal Position | SINGLE | |
| Transistor Application | MOTOR CONTROL | |
| Transistor Element Material | SILICON | |
| Turn-off Time-Nom (toff) | 357 ns | |
| Turn-on Time-Nom (ton) | 35 ns |
Alternate Parts for HGT1S5N120BNS
This table gives cross-reference parts and alternative options found for HGT1S5N120BNS. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of HGT1S5N120BNS, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
| Part Number | Description | Manufacturer | Compare |
|---|---|---|---|
| HGT1S5N120BNS9A | 21A, 1200V, N-CHANNEL IGBT, TO-263AB | Intersil Corporation | HGT1S5N120BNS vs HGT1S5N120BNS9A |
| HGT1S5N120BNS9A | Insulated Gate Bipolar Transistor, 21A I(C), 1200V V(BR)CES, N-Channel, TO-263AB | Fairchild Semiconductor Corporation | HGT1S5N120BNS vs HGT1S5N120BNS9A |