Part Details for HGT1S2N120CN by Fairchild Semiconductor Corporation
Overview of HGT1S2N120CN by Fairchild Semiconductor Corporation
- Distributor Offerings: (1 listing)
- Number of FFF Equivalents: (0 replacements)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (0 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
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Applications
Industrial Automation
Energy and Power Systems
Renewable Energy
Price & Stock for HGT1S2N120CN
| Part # | Distributor | Description | Stock | Price | Buy | |
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Rochester Electronics | Insulated Gate Bipolar Transistor, 13A, 1200V, N-Channel, TO-262AA ' RoHS: Compliant Status: Obsolete Min Qty: 1 | 16888 |
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$1.7400 / $2.0500 | Buy Now |
Part Details for HGT1S2N120CN
HGT1S2N120CN CAD Models
HGT1S2N120CN Part Data Attributes
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HGT1S2N120CN
Fairchild Semiconductor Corporation
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Datasheet
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HGT1S2N120CN
Fairchild Semiconductor Corporation
Insulated Gate Bipolar Transistor, 13A I(C), 1200V V(BR)CES, N-Channel, TO-262AA, TO-262, 3 PIN
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| Rohs Code | Yes | |
| Part Life Cycle Code | Obsolete | |
| Ihs Manufacturer | FAIRCHILD SEMICONDUCTOR CORP | |
| Part Package Code | TO-262AA | |
| Package Description | TO-262, 3 PIN | |
| Pin Count | 3 | |
| Reach Compliance Code | not_compliant | |
| ECCN Code | EAR99 | |
| Additional Feature | LOW CONDUCTION LOSS, AVALANCHE RATED | |
| Case Connection | COLLECTOR | |
| Collector Current-Max (IC) | 13 A | |
| Collector-Emitter Voltage-Max | 1200 V | |
| Configuration | SINGLE | |
| Fall Time-Max (tf) | 320 ns | |
| Gate-Emitter Voltage-Max | 20 V | |
| JEDEC-95 Code | TO-262AA | |
| JESD-30 Code | R-PSIP-T3 | |
| JESD-609 Code | e3 | |
| Number of Elements | 1 | |
| Number of Terminals | 3 | |
| Operating Temperature-Max | 150 °C | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | RECTANGULAR | |
| Package Style | IN-LINE | |
| Polarity/Channel Type | N-CHANNEL | |
| Power Dissipation-Max (Abs) | 104 W | |
| Qualification Status | Not Qualified | |
| Rise Time-Max (tr) | 15 ns | |
| Surface Mount | NO | |
| Terminal Finish | MATTE TIN | |
| Terminal Form | THROUGH-HOLE | |
| Terminal Position | SINGLE | |
| Transistor Application | POWER CONTROL | |
| Transistor Element Material | SILICON | |
| Turn-off Time-Nom (toff) | 585 ns | |
| Turn-on Time-Nom (ton) | 32 ns |