Part Details for HGT1S1N120CNDS9A by Harris Semiconductor
Overview of HGT1S1N120CNDS9A by Harris Semiconductor
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Part Details for HGT1S1N120CNDS9A
HGT1S1N120CNDS9A CAD Models
HGT1S1N120CNDS9A Part Data Attributes
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HGT1S1N120CNDS9A
Harris Semiconductor
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Datasheet
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HGT1S1N120CNDS9A
Harris Semiconductor
Insulated Gate Bipolar Transistor, 6.2A I(C), 1200V V(BR)CES, N-Channel, TO-263AB
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Part Life Cycle Code | Transferred | |
Ihs Manufacturer | HARRIS SEMICONDUCTOR | |
Package Description | SMALL OUTLINE, R-PSSO-G2 | |
Reach Compliance Code | unknown | |
ECCN Code | EAR99 | |
Additional Feature | LOW CONDUCTION LOSS, HYPER FAST RECOVERY | |
Case Connection | COLLECTOR | |
Collector Current-Max (IC) | 6.2 A | |
Collector-Emitter Voltage-Max | 1200 V | |
Configuration | SINGLE WITH BUILT-IN DIODE | |
JEDEC-95 Code | TO-263AB | |
JESD-30 Code | R-PSSO-G2 | |
Number of Elements | 1 | |
Number of Terminals | 2 | |
Package Body Material | PLASTIC/EPOXY | |
Package Shape | RECTANGULAR | |
Package Style | SMALL OUTLINE | |
Polarity/Channel Type | N-CHANNEL | |
Qualification Status | Not Qualified | |
Surface Mount | YES | |
Terminal Form | GULL WING | |
Terminal Position | SINGLE | |
Transistor Application | MOTOR CONTROL | |
Transistor Element Material | SILICON | |
Turn-off Time-Nom (toff) | 75 ns | |
Turn-on Time-Nom (ton) | 13 ns |