Part Details for HGT1S12N60B3D by Harris Semiconductor
Overview of HGT1S12N60B3D by Harris Semiconductor
- Distributor Offerings: (2 listings)
- Number of FFF Equivalents: (0 crosses)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (0 crosses)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
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Price & Stock for HGT1S12N60B3D
| Part # | Distributor | Description | Stock | Price | Buy | |
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DISTI #
2156-HGT1S12N60B3D-ND
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DigiKey | 27A, 600V, N-CHANNEL IGBT Min Qty: 221 Lead time: 1 Weeks Container: Bulk MARKETPLACE PRODUCT |
400 In Stock |
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$1.3600 | Buy Now |
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Rochester Electronics | 27A, 600V, UFS SERIES N-Channel IGBT WITH ANTI-PARALLEL HYPERFAST DIODE ' RoHS: Not Compliant Status: Obsolete Min Qty: 1 | 400 |
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$1.1700 / $1.3800 | Buy Now |
Part Details for HGT1S12N60B3D
HGT1S12N60B3D CAD Models
HGT1S12N60B3D Part Data Attributes:
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HGT1S12N60B3D
Harris Semiconductor
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Datasheet
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HGT1S12N60B3D
Harris Semiconductor
Insulated Gate Bipolar Transistor, 27A I(C), 600V V(BR)CES, N-Channel, TO-262AA, PLASTIC PACKAGE-3
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| Rohs Code | No | |
| Part Life Cycle Code | Obsolete | |
| Ihs Manufacturer | HARRIS SEMICONDUCTOR | |
| Package Description | PLASTIC PACKAGE-3 | |
| Reach Compliance Code | unknown | |
| ECCN Code | EAR99 | |
| Additional Feature | LOW CONDUCTION LOSS, HYPER FAST RECOVERY | |
| Case Connection | COLLECTOR | |
| Collector Current-Max (IC) | 27 A | |
| Collector-Emitter Voltage-Max | 600 V | |
| Configuration | SINGLE WITH BUILT-IN DIODE | |
| Gate-Emitter Thr Voltage-Max | 6 V | |
| Gate-Emitter Voltage-Max | 20 V | |
| JEDEC-95 Code | TO-262AA | |
| JESD-30 Code | R-PSIP-T3 | |
| JESD-609 Code | e0 | |
| Number of Elements | 1 | |
| Number of Terminals | 3 | |
| Operating Temperature-Max | 150 °C | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | RECTANGULAR | |
| Package Style | IN-LINE | |
| Polarity/Channel Type | N-CHANNEL | |
| Power Dissipation-Max (Abs) | 104 W | |
| Qualification Status | Not Qualified | |
| Surface Mount | NO | |
| Terminal Finish | TIN LEAD | |
| Terminal Form | THROUGH-HOLE | |
| Terminal Position | SINGLE | |
| Transistor Application | MOTOR CONTROL | |
| Transistor Element Material | SILICON | |
| Turn-off Time-Nom (toff) | 280 ns | |
| Turn-on Time-Nom (ton) | 22 ns |