Datasheets
HGT1S12N60A4DS_NL by: Fairchild Semiconductor Corporation

Insulated Gate Bipolar Transistor, 54A I(C), 600V V(BR)CES, N-Channel, TO-263AB, LEAD FREE PACKAGE-3

Part Details for HGT1S12N60A4DS_NL by Fairchild Semiconductor Corporation

Overview of HGT1S12N60A4DS_NL by Fairchild Semiconductor Corporation

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Part Details for HGT1S12N60A4DS_NL

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HGT1S12N60A4DS_NL Part Data Attributes:

HGT1S12N60A4DS_NL Fairchild Semiconductor Corporation
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HGT1S12N60A4DS_NL Fairchild Semiconductor Corporation Insulated Gate Bipolar Transistor, 54A I(C), 600V V(BR)CES, N-Channel, TO-263AB, LEAD FREE PACKAGE-3
Part Life Cycle Code Obsolete
Ihs Manufacturer FAIRCHILD SEMICONDUCTOR CORP
Part Package Code D2PAK
Package Description SMALL OUTLINE, R-PSSO-G2
Pin Count 3
Reach Compliance Code unknown
ECCN Code EAR99
Additional Feature LOW CONDUCTION LOSS
Case Connection COLLECTOR
Collector Current-Max (IC) 54 A
Collector-Emitter Voltage-Max 600 V
Configuration SINGLE WITH BUILT-IN DIODE
JEDEC-95 Code TO-263AB
JESD-30 Code R-PSSO-G2
JESD-609 Code e3
Number of Elements 1
Number of Terminals 2
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style SMALL OUTLINE
Polarity/Channel Type N-CHANNEL
Qualification Status Not Qualified
Surface Mount YES
Terminal Finish MATTE TIN
Terminal Form GULL WING
Terminal Position SINGLE
Transistor Application POWER CONTROL
Transistor Element Material SILICON
Turn-off Time-Nom (toff) 180 ns
Turn-on Time-Nom (ton) 33 ns

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