Datasheets
HGT1N40N60A4D by: Fairchild Semiconductor Corporation

Insulated Gate Bipolar Transistor, 110A I(C), 600V V(BR)CES, N-Channel, ISOTOP-4

Part Details for HGT1N40N60A4D by Fairchild Semiconductor Corporation

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Part Details for HGT1N40N60A4D

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HGT1N40N60A4D Part Data Attributes:

HGT1N40N60A4D Fairchild Semiconductor Corporation
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HGT1N40N60A4D Fairchild Semiconductor Corporation Insulated Gate Bipolar Transistor, 110A I(C), 600V V(BR)CES, N-Channel, ISOTOP-4
Rohs Code No
Part Life Cycle Code Obsolete
Ihs Manufacturer FAIRCHILD SEMICONDUCTOR CORP
Part Package Code ISOTOP
Package Description ISOTOP-4
Pin Count 4
Manufacturer Package Code ISOTOP
Reach Compliance Code compliant
ECCN Code EAR99
Additional Feature LOW CONDUCTION LOSS
Case Connection ISOLATED
Collector Current-Max (IC) 110 A
Collector-Emitter Voltage-Max 600 V
Configuration SINGLE WITH BUILT-IN DIODE
Fall Time-Max (tf) 95 ns
Gate-Emitter Thr Voltage-Max 7 V
Gate-Emitter Voltage-Max 20 V
JESD-30 Code R-PUFM-X4
Moisture Sensitivity Level 1
Number of Elements 1
Number of Terminals 4
Operating Temperature-Max 150 °C
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style FLANGE MOUNT
Polarity/Channel Type N-CHANNEL
Power Dissipation-Max (Abs) 298 W
Qualification Status Not Qualified
Surface Mount NO
Terminal Form UNSPECIFIED
Terminal Position UPPER
Transistor Application POWER CONTROL
Transistor Element Material SILICON
Turn-off Time-Nom (toff) 240 ns
Turn-on Time-Nom (ton) 47 ns

Alternate Parts for HGT1N40N60A4D

This table gives cross-reference parts and alternative options found for HGT1N40N60A4D. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of HGT1N40N60A4D, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.

Part Number Description Manufacturer Compare
APT50GF120JRD Insulated Gate Bipolar Transistor, 75A I(C), 1200V V(BR)CES, N-Channel Microchip Technology Inc HGT1N40N60A4D vs APT50GF120JRD
IXDN55N120D1 Insulated Gate Bipolar Transistor, 100A I(C), 1200V V(BR)CES, N-Channel, MINIBLOC-4 Littelfuse Inc HGT1N40N60A4D vs IXDN55N120D1
IXA60IF1200NA Insulated Gate Bipolar Transistor, Littelfuse Inc HGT1N40N60A4D vs IXA60IF1200NA
APT40GF120JRD Insulated Gate Bipolar Transistor, 60A I(C), 1200V V(BR)CES, N-Channel Microchip Technology Inc HGT1N40N60A4D vs APT40GF120JRD

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