Datasheets
HB56UW464EJN-6B by: Hitachi Ltd

EDO DRAM Module, 4MX64, 60ns, MOS

Part Details for HB56UW464EJN-6B by Hitachi Ltd

Overview of HB56UW464EJN-6B by Hitachi Ltd

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Part Details for HB56UW464EJN-6B

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HB56UW464EJN-6B Part Data Attributes:

HB56UW464EJN-6B Hitachi Ltd
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HB56UW464EJN-6B Hitachi Ltd EDO DRAM Module, 4MX64, 60ns, MOS
Part Life Cycle Code Obsolete
Ihs Manufacturer HITACHI LTD
Package Description DIMM, DIMM168
Reach Compliance Code unknown
ECCN Code EAR99
HTS Code 8542.32.00.24
Access Mode FAST PAGE WITH EDO
Access Time-Max 60 ns
Additional Feature RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH
I/O Type COMMON
JESD-30 Code R-XDMA-N168
Memory Density 268435456 bit
Memory IC Type EDO DRAM MODULE
Memory Width 64
Number of Functions 1
Number of Ports 1
Number of Terminals 168
Number of Words 4194304 words
Number of Words Code 4000000
Operating Mode ASYNCHRONOUS
Operating Temperature-Max 70 °C
Operating Temperature-Min
Organization 4MX64
Output Characteristics 3-STATE
Package Body Material UNSPECIFIED
Package Code DIMM
Package Equivalence Code DIMM168
Package Shape RECTANGULAR
Package Style MICROELECTRONIC ASSEMBLY
Qualification Status Not Qualified
Refresh Cycles 4096
Self Refresh NO
Standby Current-Max 0.016 A
Supply Current-Max 1.6 mA
Supply Voltage-Max (Vsup) 3.6 V
Supply Voltage-Min (Vsup) 3 V
Supply Voltage-Nom (Vsup) 3.3 V
Surface Mount NO
Technology MOS
Temperature Grade COMMERCIAL
Terminal Form NO LEAD
Terminal Pitch 1.27 mm
Terminal Position DUAL

Alternate Parts for HB56UW464EJN-6B

This table gives cross-reference parts and alternative options found for HB56UW464EJN-6B. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of HB56UW464EJN-6B, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.

Part Number Description Manufacturer Compare
HB56UW464EJN-6 EDO DRAM Module, 4MX64, 60ns, CMOS, DIMM-168 Hitachi Ltd HB56UW464EJN-6B vs HB56UW464EJN-6
TM4EP64CPN-60 4MX72 EDO DRAM MODULE, 60ns, PDMA168, MODULE-168 Texas Instruments HB56UW464EJN-6B vs TM4EP64CPN-60
HYM64V4045GU-60 EDO DRAM Module, 4MX64, 60ns, CMOS, DIMM-168 Infineon Technologies AG HB56UW464EJN-6B vs HYM64V4045GU-60
TM4EP64CJN-60 4MX72 EDO DRAM MODULE, 60ns, PDMA168, MODULE-168 Texas Instruments HB56UW464EJN-6B vs TM4EP64CJN-60
IBM11N4645CB-60J EDO DRAM Module, 4MX64, 60ns, CMOS, DIMM-168 IBM HB56UW464EJN-6B vs IBM11N4645CB-60J
Part Number Description Manufacturer Compare
TM4TT64KPN-8 4MX64 SYNCHRONOUS DRAM MODULE, 6ns, DMA168, DIMM-168 Texas Instruments HB56UW464EJN-6B vs TM4TT64KPN-8
GMM2644233CNTG-12 Synchronous DRAM Module, 4MX64, 9.5ns, CMOS, DIMM-168 LG Semicon Co Ltd HB56UW464EJN-6B vs GMM2644233CNTG-12
KMM364E400CS-5 EDO DRAM Module, 4MX64, 50ns, CMOS, DIMM-168 Samsung Semiconductor HB56UW464EJN-6B vs KMM364E400CS-5
HYM7V64400TF-10 Synchronous DRAM Module, 4MX64, CMOS, DIMM-168 SK Hynix Inc HB56UW464EJN-6B vs HYM7V64400TF-10
SM564048074X62F Synchronous DRAM Module, 4MX64, CMOS, DIMM-144 SMART Modular Technology Inc HB56UW464EJN-6B vs SM564048074X62F
MT16LD464G-7B EDO DRAM Module, 4MX64, 70ns, CMOS, DIMM-168 Micron Technology Inc HB56UW464EJN-6B vs MT16LD464G-7B
MT4LSDT464AG-10EC6 Synchronous DRAM Module, 4MX64, 6ns, CMOS, DIMM-168 Micron Technology Inc HB56UW464EJN-6B vs MT4LSDT464AG-10EC6
HB56UW464EJN-7 EDO DRAM Module, 4MX64, 70ns, CMOS, DIMM-168 Hitachi Ltd HB56UW464EJN-6B vs HB56UW464EJN-7
HB56UW464EJ-7B EDO DRAM Module, 4MX64, 70ns, CMOS, DIMM-168 Hitachi Ltd HB56UW464EJN-6B vs HB56UW464EJ-7B
HYM564414CNG-50 EDO DRAM Module, 4MX64, 50ns, CMOS, PDMA168, DIMM-168 SK Hynix Inc HB56UW464EJN-6B vs HYM564414CNG-50

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