Part Details for HB56R872ES-6B by Hitachi Ltd
Overview of HB56R872ES-6B by Hitachi Ltd
- Distributor Offerings: (0 listings)
- Number of FFF Equivalents: (0 crosses)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (10 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
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Part Details for HB56R872ES-6B
HB56R872ES-6B CAD Models
HB56R872ES-6B Part Data Attributes:
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HB56R872ES-6B
Hitachi Ltd
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Datasheet
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HB56R872ES-6B
Hitachi Ltd
Fast Page DRAM Module, 8MX72, 60ns, CMOS, DIMM-168
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| Part Life Cycle Code | Obsolete | |
| Ihs Manufacturer | HITACHI LTD | |
| Part Package Code | DIMM | |
| Package Description | DIMM, DIMM168 | |
| Pin Count | 168 | |
| Reach Compliance Code | unknown | |
| ECCN Code | EAR99 | |
| HTS Code | 8542.32.00.32 | |
| Access Mode | FAST PAGE | |
| Access Time-Max | 60 ns | |
| Additional Feature | RAS ONLY/CAS BEFORE RAS REFRESH | |
| I/O Type | COMMON | |
| JESD-30 Code | R-XDMA-N168 | |
| Memory Density | 603979776 bit | |
| Memory IC Type | FAST PAGE DRAM MODULE | |
| Memory Width | 72 | |
| Number of Functions | 1 | |
| Number of Ports | 1 | |
| Number of Terminals | 168 | |
| Number of Words | 8388608 words | |
| Number of Words Code | 8000000 | |
| Operating Mode | ASYNCHRONOUS | |
| Operating Temperature-Max | 70 °C | |
| Operating Temperature-Min | ||
| Organization | 8MX72 | |
| Output Characteristics | 3-STATE | |
| Package Body Material | UNSPECIFIED | |
| Package Code | DIMM | |
| Package Equivalence Code | DIMM168 | |
| Package Shape | RECTANGULAR | |
| Package Style | MICROELECTRONIC ASSEMBLY | |
| Qualification Status | Not Qualified | |
| Refresh Cycles | 4096 | |
| Seated Height-Max | 25.4 mm | |
| Standby Current-Max | 0.1 A | |
| Supply Current-Max | 1.594 mA | |
| Supply Voltage-Max (Vsup) | 5.25 V | |
| Supply Voltage-Min (Vsup) | 4.75 V | |
| Supply Voltage-Nom (Vsup) | 5 V | |
| Surface Mount | NO | |
| Technology | CMOS | |
| Temperature Grade | COMMERCIAL | |
| Terminal Form | NO LEAD | |
| Terminal Pitch | 1.27 mm | |
| Terminal Position | DUAL |
Alternate Parts for HB56R872ES-6B
This table gives cross-reference parts and alternative options found for HB56R872ES-6B. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of HB56R872ES-6B, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
| Part Number | Description | Manufacturer | Compare |
|---|---|---|---|
| STI728107D2-70VGE | EDO DRAM Module, 8MX72, 70ns, MOS, DIMM-168 | Simple Tech Inc | HB56R872ES-6B vs STI728107D2-70VGE |
| MT9LSDT872AG-10CC7 | Synchronous DRAM Module, 8MX72, 6ns, CMOS, DIMM-168 | Micron Technology Inc | HB56R872ES-6B vs MT9LSDT872AG-10CC7 |
| GMM2739233CTG-10J | Synchronous DRAM Module, 8MX72, 9.5ns, CMOS, DIMM-168 | LG Semicon Co Ltd | HB56R872ES-6B vs GMM2739233CTG-10J |
| M372F0883DT0-C60 | EDO DRAM Module, 8MX72, 60ns, CMOS, DIMM-168 | Samsung Semiconductor | HB56R872ES-6B vs M372F0883DT0-C60 |
| GMM2739230CTG-8 | Synchronous DRAM, 8MX72, CMOS, DIMM-168 | LG Semicon Co Ltd | HB56R872ES-6B vs GMM2739230CTG-8 |
| KMM374F883CS3-6 | EDO DRAM Module, 8MX72, 60ns, CMOS, GLASS EPOXY, DIMM-168 | Samsung Semiconductor | HB56R872ES-6B vs KMM374F883CS3-6 |
| KMM375S823CT-GL0 | Synchronous DRAM Module, 8MX72, 6ns, CMOS, DIMM-168 | Samsung Semiconductor | HB56R872ES-6B vs KMM375S823CT-GL0 |
| KMM372C803BK-6 | Fast Page DRAM Module, 8MX72, 60ns, CMOS | Samsung Semiconductor | HB56R872ES-6B vs KMM372C803BK-6 |
| HYM7V75AS801ATHG-10P | Synchronous DRAM Module, 8MX72, 6ns, CMOS, PDMA168, DIMM-168 | SK Hynix Inc | HB56R872ES-6B vs HYM7V75AS801ATHG-10P |
| M372V0883DJ0-C50 | Fast Page DRAM Module, 8MX72, 50ns, CMOS, DIMM-168 | Samsung Semiconductor | HB56R872ES-6B vs M372V0883DJ0-C50 |