Datasheets
HAT3006R by:

Power Field-Effect Transistor, 6.5A I(D), 30V, 0.18ohm, 2-Element, N-Channel and P-Channel, Silicon, Metal-oxide Semiconductor FET, FP-8DA, SOP-8

Part Details for HAT3006R by Hitachi Ltd

Overview of HAT3006R by Hitachi Ltd

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Applications Space Technology Aerospace and Defense Energy and Power Systems

Available Datasheets

Part # Manufacturer Description Datasheet
HAT3006R-EL-E Renesas Electronics Corporation Nch/Pch Dual Power Mosfet 30V 6.5A 45Mohm Sop8

Part Details for HAT3006R

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HAT3006R Part Data Attributes

HAT3006R Hitachi Ltd
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HAT3006R Hitachi Ltd Power Field-Effect Transistor, 6.5A I(D), 30V, 0.18ohm, 2-Element, N-Channel and P-Channel, Silicon, Metal-oxide Semiconductor FET, FP-8DA, SOP-8
Part Life Cycle Code Transferred
Ihs Manufacturer HITACHI LTD
Part Package Code SOT
Package Description SMALL OUTLINE, R-PDSO-G8
Pin Count 8
Reach Compliance Code unknown
ECCN Code EAR99
Configuration SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 30 V
Drain Current-Max (ID) 6.5 A
Drain-source On Resistance-Max 0.18 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR
JESD-30 Code R-PDSO-G8
Number of Elements 2
Number of Terminals 8
Operating Mode ENHANCEMENT MODE
Operating Temperature-Max 150 °C
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style SMALL OUTLINE
Polarity/Channel Type N-CHANNEL AND P-CHANNEL
Power Dissipation-Max (Abs) 2 W
Pulsed Drain Current-Max (IDM) 52 A
Qualification Status Not Qualified
Surface Mount YES
Terminal Form GULL WING
Terminal Position DUAL
Transistor Application SWITCHING
Transistor Element Material SILICON

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