Part Details for HAT2165H by Renesas Electronics Corporation
Overview of HAT2165H by Renesas Electronics Corporation
- Distributor Offerings: (3 listings)
- Number of FFF Equivalents: (0 crosses)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (10 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Price & Stock for HAT2165H
| Part # | Distributor | Description | Stock | Price | Buy | |
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Quest Components | 55 A, 30 V, 0.0053 ohm, N-CHANNEL, Si, POWER, MOSFET | 8 |
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$2.0700 / $2.2500 | Buy Now |
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Quest Components | 55 A, 30 V, 0.0053 ohm, N-CHANNEL, Si, POWER, MOSFET | 857 |
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$3.3000 / $6.6000 | Buy Now |
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DISTI #
SMC-HAT2165H
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Sensible Micro Corporation | 55 A, 30 V, 0.0053 Ohm, N-Channel, Si, Power, Mosfet RoHS: Not Compliant Min Qty: 25 Lead time: 0 Weeks, 1 Days Date Code: 08+ Container: Cut Tape | 18 |
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$4.5280 | RFQ |
Part Details for HAT2165H
HAT2165H CAD Models
HAT2165H Part Data Attributes:
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HAT2165H
Renesas Electronics Corporation
Buy Now
Datasheet
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Compare Parts:
HAT2165H
Renesas Electronics Corporation
55A, 30V, 0.0053ohm, N-CHANNEL, Si, POWER, MOSFET, LFPAK-5
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| Part Life Cycle Code | Not Recommended | |
| Ihs Manufacturer | RENESAS ELECTRONICS CORP | |
| Package Description | LFPAK-5 | |
| Pin Count | 5 | |
| Reach Compliance Code | compliant | |
| ECCN Code | EAR99 | |
| Case Connection | DRAIN | |
| Configuration | SINGLE WITH BUILT-IN DIODE | |
| DS Breakdown Voltage-Min | 30 V | |
| Drain Current-Max (ID) | 55 A | |
| Drain-source On Resistance-Max | 0.0053 Ω | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| JESD-30 Code | R-PSSO-G4 | |
| Number of Elements | 1 | |
| Number of Terminals | 4 | |
| Operating Mode | ENHANCEMENT MODE | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | RECTANGULAR | |
| Package Style | SMALL OUTLINE | |
| Polarity/Channel Type | N-CHANNEL | |
| Pulsed Drain Current-Max (IDM) | 220 A | |
| Qualification Status | Not Qualified | |
| Surface Mount | YES | |
| Terminal Form | GULL WING | |
| Terminal Position | SINGLE | |
| Transistor Application | SWITCHING | |
| Transistor Element Material | SILICON |
Alternate Parts for HAT2165H
This table gives cross-reference parts and alternative options found for HAT2165H. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of HAT2165H, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
| Part Number | Description | Manufacturer | Compare |
|---|---|---|---|
| HAT2166H | 45A, 30V, 0.0061ohm, N-CHANNEL, Si, POWER, MOSFET, LFPAK-5 | Renesas Electronics Corporation | HAT2165H vs HAT2166H |
| FDS7088N3 | 21A, 30V, 0.004ohm, N-CHANNEL, Si, POWER, MOSFET, FLMP, SO-8 | Rochester Electronics LLC | HAT2165H vs FDS7088N3 |
| HAT2166H-EL-E | Nch Single Power Mosfet 30V 45A 3.8Mohm Lfpak, LFPAK, /Embossed Tape | Renesas Electronics Corporation | HAT2165H vs HAT2166H-EL-E |
| BSC079N03SG | Power Field-Effect Transistor, 14.6A I(D), 30V, 0.0116ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, GREEN, PLASTIC, TDSON-8 | Infineon Technologies AG | HAT2165H vs BSC079N03SG |
| BSC059N03SG | Power Field-Effect Transistor, 17.5A I(D), 30V, 0.0086ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, GREEN, PLASTIC, TDSON-8 | Infineon Technologies AG | HAT2165H vs BSC059N03SG |
| HAT2096H | Power Field-Effect Transistor, 40A I(D), 30V, 0.01ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, LFPAK-5 | Hitachi Ltd | HAT2165H vs HAT2096H |
| HAT2164H-EL-E | Nch Single Power Mosfet 30V 60A 3.1Mohm Lfpak, LFPAK, /Embossed Tape | Renesas Electronics Corporation | HAT2165H vs HAT2164H-EL-E |
| BSC042N03LSG | Power Field-Effect Transistor, 20A I(D), 30V, 0.0065ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, GREEN, PLASTIC, TDSON-8 | Infineon Technologies AG | HAT2165H vs BSC042N03LSG |
| BSC057N03LSGXT | Power Field-Effect Transistor, 17A I(D), 30V, 0.0085ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, GREEN, PLASTIC, TDSON-8 | Infineon Technologies AG | HAT2165H vs BSC057N03LSGXT |
| FDS7082N3 | Power Field-Effect Transistor, 17.5A I(D), 30V, 0.006ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, FLMP, SO-8 | Fairchild Semiconductor Corporation | HAT2165H vs FDS7082N3 |