Part Details for HAT2116H-EL-E by Renesas Electronics Corporation
Overview of HAT2116H-EL-E by Renesas Electronics Corporation
- Distributor Offerings: (2 listings)
- Number of FFF Equivalents: (0 replacements)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (0 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Available Datasheets
| Part # | Manufacturer | Description | Datasheet |
|---|---|---|---|
| HAT2116H-EL-E | Renesas Electronics Corporation | Nch Single Power Mosfet 30V 30A 8.2Mohm Lfpak |
Price & Stock for HAT2116H-EL-E
| Part # | Distributor | Description | Stock | Price | Buy | |
|---|---|---|---|---|---|---|
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DISTI #
HAT2116H-EL-E-ND
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DigiKey | MOSFET N-CH 30V 30A LFPAK Lead time: 36 Weeks Container: Tape & Reel (TR) | Temporarily Out of Stock |
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Buy Now | |
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Quest Components | POWER FIELD-EFFECT TRANSISTOR, 30A I(D), 30V, 0.0153OHM, 1-ELEMENT, N-CHANNEL, SILICON, METAL-OXIDE SEMICONDUCTOR FET | 2277 |
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$0.8040 / $2.1440 | Buy Now |
Part Details for HAT2116H-EL-E
HAT2116H-EL-E CAD Models
HAT2116H-EL-E Part Data Attributes
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HAT2116H-EL-E
Renesas Electronics Corporation
Buy Now
Datasheet
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HAT2116H-EL-E
Renesas Electronics Corporation
Nch Single Power Mosfet 30V 30A 8.2Mohm Lfpak, LFPAK, /Embossed Tape
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| Pbfree Code | Yes | |
| Rohs Code | Yes | |
| Part Life Cycle Code | Not Recommended | |
| Ihs Manufacturer | RENESAS ELECTRONICS CORP | |
| Part Package Code | LFPAK | |
| Package Description | SMALL OUTLINE, R-PSSO-G4 | |
| Pin Count | 5 | |
| Manufacturer Package Code | PTZZ0005DA | |
| Reach Compliance Code | compliant | |
| ECCN Code | EAR99 | |
| Samacsys Manufacturer | Renesas Electronics | |
| Case Connection | DRAIN | |
| Configuration | SINGLE WITH BUILT-IN DIODE | |
| DS Breakdown Voltage-Min | 30 V | |
| Drain Current-Max (ID) | 30 A | |
| Drain-source On Resistance-Max | 0.0153 Ω | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| JESD-30 Code | R-PSSO-G4 | |
| Moisture Sensitivity Level | 1 | |
| Number of Elements | 1 | |
| Number of Terminals | 4 | |
| Operating Mode | ENHANCEMENT MODE | |
| Operating Temperature-Max | 150 °C | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | RECTANGULAR | |
| Package Style | SMALL OUTLINE | |
| Peak Reflow Temperature (Cel) | 260 | |
| Polarity/Channel Type | N-CHANNEL | |
| Power Dissipation-Max (Abs) | 15 W | |
| Pulsed Drain Current-Max (IDM) | 120 A | |
| Qualification Status | Not Qualified | |
| Surface Mount | YES | |
| Terminal Form | GULL WING | |
| Terminal Position | SINGLE | |
| Time@Peak Reflow Temperature-Max (s) | 20 | |
| Transistor Application | SWITCHING | |
| Transistor Element Material | SILICON |