Datasheets
HAT2096H-EL-E by: Renesas Electronics Corporation

Nch Single Power Mosfet 30V 40A 5.3Mohm Lfpak, LFPAK, /Embossed Tape

Part Details for HAT2096H-EL-E by Renesas Electronics Corporation

Overview of HAT2096H-EL-E by Renesas Electronics Corporation

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Available Datasheets

Part # Manufacturer Description Datasheet
HAT2096H-EL-E Renesas Electronics Corporation Nch Single Power Mosfet 30V 40A 5.3Mohm Lfpak

Price & Stock for HAT2096H-EL-E

Part # Distributor Description Stock Price Buy
DISTI # HAT2096H-EL-E-ND
DigiKey MOSFET N-CH 30V 40A LFPAK Lead time: 36 Weeks Container: Tape & Reel (TR) Temporarily Out of Stock
Buy Now
Bristol Electronics   4652
RFQ
Quest Components POWER FIELD-EFFECT TRANSISTOR, 40A I(D), 30V, 0.01OHM, 1-ELEMENT, N-CHANNEL, SILICON, METAL-OXIDE SEMICONDUCTOR FET 1989
  • 1 $3.0480
  • 427 $1.2573
  • 796 $1.1430
$1.1430 / $3.0480 Buy Now
DISTI # HAT2096H-EL-E
Avnet Asia Trans MOSFET N-CH 30V 0.12A 5-Pin(4+Tab) LFPAK T/R (Alt: HAT2096H-EL-E) RoHS: Compliant Min Qty: 2500 Package Multiple: 2500 Lead time: 18 Weeks, 0 Days 0
RFQ
Win Source Electronics MOSFET N-CH 30V 40A LFPAK 57000
  • 40 $1.4130
  • 90 $1.1600
  • 135 $1.1240
  • 185 $1.0870
  • 240 $1.0510
  • 320 $0.9420
$0.9420 / $1.4130 Buy Now

Part Details for HAT2096H-EL-E

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HAT2096H-EL-E Part Data Attributes

HAT2096H-EL-E Renesas Electronics Corporation
Buy Now Datasheet
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HAT2096H-EL-E Renesas Electronics Corporation Nch Single Power Mosfet 30V 40A 5.3Mohm Lfpak, LFPAK, /Embossed Tape
Pbfree Code Yes
Rohs Code Yes
Part Life Cycle Code Not Recommended
Ihs Manufacturer RENESAS TECHNOLOGY CORP
Part Package Code LFPAK
Package Description SC-100, LFPAK-5
Pin Count 5
Manufacturer Package Code PTZZ0005DA
Reach Compliance Code unknown
ECCN Code EAR99
Samacsys Manufacturer Renesas Electronics
Case Connection DRAIN
Configuration SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 30 V
Drain Current-Max (ID) 40 A
Drain-source On Resistance-Max 0.01 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR
JESD-30 Code R-PSSO-G4
Moisture Sensitivity Level 1
Number of Elements 1
Number of Terminals 4
Operating Mode ENHANCEMENT MODE
Operating Temperature-Max 150 °C
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style SMALL OUTLINE
Peak Reflow Temperature (Cel) 260
Polarity/Channel Type N-CHANNEL
Power Dissipation-Max (Abs) 20 W
Pulsed Drain Current-Max (IDM) 160 A
Qualification Status Not Qualified
Surface Mount YES
Terminal Form GULL WING
Terminal Position SINGLE
Time@Peak Reflow Temperature-Max (s) 20
Transistor Application SWITCHING
Transistor Element Material SILICON

Alternate Parts for HAT2096H-EL-E

This table gives cross-reference parts and alternative options found for HAT2096H-EL-E. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of HAT2096H-EL-E, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.

Part Number Description Manufacturer Compare
BSZ088N03MSG Power Field-Effect Transistor, 40A I(D), 30V, 0.0097ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, GREEN, PLASTIC, TSDSON-8 Infineon Technologies AG HAT2096H-EL-E vs BSZ088N03MSG
BSZ088N03MSGATMA1 Power Field-Effect Transistor, 40A I(D), 30V, 0.0097ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, GREEN, PLASTIC, TSDSON-8 Infineon Technologies AG HAT2096H-EL-E vs BSZ088N03MSGATMA1

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