Part Details for HAT1024R by Renesas Electronics Corporation
Overview of HAT1024R by Renesas Electronics Corporation
- Distributor Offerings: (0 listings)
- Number of FFF Equivalents: (0 replacements)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (10 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
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Applications
Education and Research
Internet of Things (IoT)
Computing and Data Storage
Aerospace and Defense
Healthcare
Telecommunications
Automotive
Available Datasheets
| Part # | Manufacturer | Description | Datasheet |
|---|---|---|---|
| HAT1024R-EL-E | Renesas Electronics Corporation | Pch Dual Power Mosfet -30V -3.5A 160Mohm Sop8 |
Part Details for HAT1024R
HAT1024R CAD Models
HAT1024R Part Data Attributes
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HAT1024R
Renesas Electronics Corporation
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Datasheet
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HAT1024R
Renesas Electronics Corporation
3.5A, 30V, 0.34ohm, 2 CHANNEL, P-CHANNEL, Si, POWER, MOSFET, MS-012AA, FP-8DA, SOP-8
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| Part Life Cycle Code | Obsolete | |
| Ihs Manufacturer | RENESAS ELECTRONICS CORP | |
| Part Package Code | SOIC | |
| Package Description | SMALL OUTLINE, R-PDSO-G8 | |
| Pin Count | 8 | |
| Reach Compliance Code | unknown | |
| ECCN Code | EAR99 | |
| Configuration | SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE | |
| DS Breakdown Voltage-Min | 30 V | |
| Drain Current-Max (ID) | 3.5 A | |
| Drain-source On Resistance-Max | 0.34 Ω | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| JEDEC-95 Code | MS-012AA | |
| JESD-30 Code | R-PDSO-G8 | |
| Number of Elements | 2 | |
| Number of Terminals | 8 | |
| Operating Mode | ENHANCEMENT MODE | |
| Operating Temperature-Max | 150 °C | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | RECTANGULAR | |
| Package Style | SMALL OUTLINE | |
| Polarity/Channel Type | P-CHANNEL | |
| Power Dissipation-Max (Abs) | 3 W | |
| Pulsed Drain Current-Max (IDM) | 28 A | |
| Qualification Status | Not Qualified | |
| Surface Mount | YES | |
| Terminal Form | GULL WING | |
| Terminal Position | DUAL | |
| Transistor Application | SWITCHING | |
| Transistor Element Material | SILICON |
Alternate Parts for HAT1024R
This table gives cross-reference parts and alternative options found for HAT1024R. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of HAT1024R, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
| Part Number | Description | Manufacturer | Compare |
|---|---|---|---|
| IRF7403PBF | Power Field-Effect Transistor, 8.5A I(D), 30V, 0.022ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA, LEAD FREE, SO-8 | Infineon Technologies AG | HAT1024R vs IRF7403PBF |
| RF1K4909096 | Power Field-Effect Transistor, 3.5A I(D), 12V, 0.05ohm, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA | Harris Semiconductor | HAT1024R vs RF1K4909096 |
| NDS9956 | Power Field-Effect Transistor, 3.5A I(D), 20V, 0.1ohm, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | National Semiconductor Corporation | HAT1024R vs NDS9956 |
| IRF7314 | Power Field-Effect Transistor, 5.3A I(D), 20V, 0.058ohm, 2-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA, SO-8 | International Rectifier | HAT1024R vs IRF7314 |
| PHN210T/R | TRANSISTOR 3.4 A, 30 V, 0.1 ohm, 2 CHANNEL, N-CHANNEL, Si, POWER, MOSFET, MS-012AA, PLASTIC, SMD, SO-8, FET General Purpose Power | NXP Semiconductors | HAT1024R vs PHN210T/R |
| FDS4935A | Dual P-Channel PowerTrench® MOSFET,- 30V, -7A, 23mΩ, SOIC-8, 2500-REEL | onsemi | HAT1024R vs FDS4935A |
| BSO4804 | Power Field-Effect Transistor, 8A I(D), 30V, 0.02ohm, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, ROHS COMPLIANT, SO-8 | Infineon Technologies AG | HAT1024R vs BSO4804 |
| FDS6892A | Dual N-Channel Logic Level PWM Optimized PowerTrench® MOSFET 20V, 7.5A, 18mΩ, SOIC-8, 2500-REEL | onsemi | HAT1024R vs FDS6892A |
| IRF7403 | Power Field-Effect Transistor, 6.7A I(D), 30V, 0.022ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA, | International Rectifier | HAT1024R vs IRF7403 |
| FDS9926A_NL | Power Field-Effect Transistor, 6.5A I(D), 20V, 0.03ohm, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, SO-8 | Fairchild Semiconductor Corporation | HAT1024R vs FDS9926A_NL |