Datasheets
HAF2026RJ-EL-E by: Renesas Electronics Corporation

Silicon N Channel Power MOS FET Power Switching, SOP, /Embossed Tape

Part Details for HAF2026RJ-EL-E by Renesas Electronics Corporation

Overview of HAF2026RJ-EL-E by Renesas Electronics Corporation

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Price & Stock for HAF2026RJ-EL-E

Part # Distributor Description Stock Price Buy
DISTI # 559-HAF2026RJ-EL-ECT-ND
DigiKey ABU / MOSFET Min Qty: 1 Lead time: 18 Weeks Container: Digi-Reel®, Cut Tape (CT), Tape & Reel (TR) 4436
In Stock
  • 1 $2.6900
  • 10 $2.2370
  • 100 $1.7804
  • 500 $1.5065
  • 1,000 $1.2783
  • 2,500 $1.2143
  • 5,000 $1.1687
$1.1687 / $2.6900 Buy Now
DISTI # HAF2026RJ-EL-E
Avnet Americas Transistor MOSFET Array N-Channel 60V 0.6A 8-Pin SOP Embossed T/R - Tape and Reel (Alt: HAF2026RJ-EL-E) RoHS: Compliant Min Qty: 2500 Package Multiple: 2500 Lead time: 18 Weeks, 0 Days Container: Reel 0
  • 2,500 $1.3108
  • 5,000 $1.2837
  • 10,000 $1.2566
  • 15,000 $1.2294
  • 20,000 $1.2023
  • 25,000 $1.1752
  • 250,000 $1.1481
$1.1481 / $1.3108 Buy Now
DISTI # 968-HAF2026RJ-EL-E
Mouser Electronics MOSFET POWER TRS CAR THERMAL SOP-8J RoHS: Compliant 2500
  • 1 $2.6800
  • 10 $2.2300
  • 100 $1.7800
  • 250 $1.6400
  • 500 $1.4900
  • 1,000 $1.2700
  • 2,500 $1.2100
  • 5,000 $1.1600
$1.1600 / $2.6800 Buy Now
Future Electronics   RoHS: Compliant pbFree: Yes Min Qty: 2500 Package Multiple: 2500 Container: Reel 0
Reel
  • 2,500 $1.2100
$1.2100 Buy Now
Renesas Electronics America ABU / MOSFET Min Qty: 1 Container: Tape & Reel (TR) 4436
  • 1 $2.6900
  • 10 $2.2370
  • 100 $1.7804
  • 500 $1.5065
  • 1,000 $1.2783
  • 2,500 $1.2143
  • 5,000 $1.1687
$1.1687 / $2.6900 Buy Now
DISTI # HAF2026RJ-EL-E
Avnet Americas Transistor MOSFET Array N-Channel 60V 0.6A 8-Pin SOP Embossed T/R - Tape and Reel (Alt: HAF2026RJ-EL-E) RoHS: Compliant Min Qty: 2500 Package Multiple: 2500 Lead time: 18 Weeks, 0 Days Container: Reel 0
  • 2,500 $1.3108
  • 5,000 $1.2837
  • 10,000 $1.2566
  • 15,000 $1.2294
  • 20,000 $1.2023
  • 25,000 $1.1752
  • 250,000 $1.1481
$1.1481 / $1.3108 Buy Now
DISTI # HAF2026RJ-EL-E
Avnet Americas Transistor MOSFET Array N-Channel 60V 0.6A 8-Pin SOP Embossed T/R - Tape and Reel (Alt: HAF2026RJ-EL-E) RoHS: Compliant Min Qty: 2500 Package Multiple: 2500 Lead time: 18 Weeks, 0 Days Container: Reel 0
  • 2,500 $1.3108
  • 5,000 $1.2837
  • 10,000 $1.2566
  • 15,000 $1.2294
  • 20,000 $1.2023
  • 25,000 $1.1752
  • 250,000 $1.1481
$1.1481 / $1.3108 Buy Now
Chip1Cloud Silicon N Channel Power MOSFET Power Switching 43500
RFQ
DISTI # 4307202
Farnell MOSFET, DUAL N-CH, 60V, 0.6A, SOP RoHS: Compliant Min Qty: 2500 Lead time: 19 Weeks, 1 Days Container: Cut Tape 0
  • 2,500 $1.1744
$1.1744 Buy Now
DISTI # 4307202RL
Farnell MOSFET, DUAL N-CH, 60V, 0.6A, SOP RoHS: Compliant Min Qty: 2500 Lead time: 19 Weeks, 1 Days Container: Reel 0
  • 2,500 $1.1744
$1.1744 Buy Now

Part Details for HAF2026RJ-EL-E

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HAF2026RJ-EL-E Part Data Attributes

HAF2026RJ-EL-E Renesas Electronics Corporation
Buy Now Datasheet
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HAF2026RJ-EL-E Renesas Electronics Corporation Silicon N Channel Power MOS FET Power Switching, SOP, /Embossed Tape
Pbfree Code Yes
Rohs Code Yes
Part Life Cycle Code Not Recommended
Ihs Manufacturer RENESAS ELECTRONICS CORP
Part Package Code SOP
Package Description SMALL OUTLINE, R-PDSO-G8
Pin Count 8
Manufacturer Package Code PRSP0008DD
Reach Compliance Code compliant
ECCN Code EAR99
Factory Lead Time 18 Weeks
Samacsys Manufacturer Renesas Electronics
Configuration SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 60 V
Drain Current-Max (ID) 0.6 A
Drain-source On Resistance-Max 0.3 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR
JESD-30 Code R-PDSO-G8
Moisture Sensitivity Level 1
Number of Elements 2
Number of Terminals 8
Operating Mode ENHANCEMENT MODE
Operating Temperature-Max 150 °C
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style SMALL OUTLINE
Polarity/Channel Type N-CHANNEL
Power Dissipation-Max (Abs) 1.5 W
Qualification Status Not Qualified
Surface Mount YES
Terminal Form GULL WING
Terminal Position DUAL
Transistor Application SWITCHING
Transistor Element Material SILICON

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