Part Details for HA1930C by Msi Electronics Inc
Overview of HA1930C by Msi Electronics Inc
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Part Details for HA1930C
HA1930C CAD Models
HA1930C Part Data Attributes
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HA1930C
Msi Electronics Inc
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HA1930C
Msi Electronics Inc
Variable Capacitance Diode, Very High Frequency to Ultra High Frequency, 18pF C(T), 30V, Silicon, Hyperabrupt
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Part Life Cycle Code | Obsolete | |
Ihs Manufacturer | MSI ELECTRONICS INC | |
Package Description | O-LALF-W2 | |
Reach Compliance Code | unknown | |
ECCN Code | EAR99 | |
HTS Code | 8541.10.00.80 | |
Additional Feature | HIGH Q | |
Breakdown Voltage-Min | 30 V | |
Case Connection | ISOLATED | |
Configuration | SINGLE | |
Diode Cap Tolerance | 2% | |
Diode Capacitance Ratio-Min | 4 | |
Diode Capacitance-Nom | 18 pF | |
Diode Element Material | SILICON | |
Diode Type | VARIABLE CAPACITANCE DIODE | |
Frequency Band | VERY HIGH FREQUENCY TO ULTRA HIGH FREQUENCY | |
JESD-30 Code | O-LALF-W2 | |
Number of Elements | 1 | |
Number of Terminals | 2 | |
Operating Temperature-Max | 175 °C | |
Package Body Material | GLASS | |
Package Shape | ROUND | |
Package Style | LONG FORM | |
Power Dissipation-Max | 0.4 W | |
Qualification Status | Not Qualified | |
Quality Factor-Min | 600 | |
Rep Pk Reverse Voltage-Max | 30 V | |
Reverse Current-Max | 2e-8 µA | |
Reverse Test Voltage | 25 V | |
Surface Mount | NO | |
Terminal Form | WIRE | |
Terminal Position | AXIAL | |
Variable Capacitance Diode Classification | HYPERABRUPT |