Datasheets
H5PS1G43EFR-E3 by: SK Hynix Inc

DDR DRAM, 256MX4, 0.6ns, CMOS, PBGA60, HALOGEN FREE AND ROHS COMPLIANT, FBGA-60

Part Details for H5PS1G43EFR-E3 by SK Hynix Inc

Overview of H5PS1G43EFR-E3 by SK Hynix Inc

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Applications Consumer Electronics Internet of Things (IoT) Computing and Data Storage

Part Details for H5PS1G43EFR-E3

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H5PS1G43EFR-E3 Part Data Attributes

H5PS1G43EFR-E3 SK Hynix Inc
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H5PS1G43EFR-E3 SK Hynix Inc DDR DRAM, 256MX4, 0.6ns, CMOS, PBGA60, HALOGEN FREE AND ROHS COMPLIANT, FBGA-60
Rohs Code Yes
Part Life Cycle Code Obsolete
Ihs Manufacturer SK HYNIX INC
Part Package Code BGA
Package Description TFBGA, BGA60,9X11,32
Pin Count 60
Reach Compliance Code compliant
ECCN Code EAR99
HTS Code 8542.32.00.32
Access Mode MULTI BANK PAGE BURST
Access Time-Max 0.6 ns
Additional Feature AUTO/SELF REFRESH
Clock Frequency-Max (fCLK) 200 MHz
I/O Type COMMON
Interleaved Burst Length 4,8
JESD-30 Code R-PBGA-B60
JESD-609 Code e1
Length 11.4 mm
Memory Density 1073741824 bit
Memory IC Type DDR2 DRAM
Memory Width 4
Number of Functions 1
Number of Ports 1
Number of Terminals 60
Number of Words 268435456 words
Number of Words Code 256000000
Operating Mode SYNCHRONOUS
Operating Temperature-Max 85 °C
Operating Temperature-Min
Organization 256MX4
Output Characteristics 3-STATE
Package Body Material PLASTIC/EPOXY
Package Code TFBGA
Package Equivalence Code BGA60,9X11,32
Package Shape RECTANGULAR
Package Style GRID ARRAY, THIN PROFILE, FINE PITCH
Peak Reflow Temperature (Cel) 260
Qualification Status Not Qualified
Refresh Cycles 8192
Seated Height-Max 1.2 mm
Self Refresh YES
Sequential Burst Length 4,8
Supply Current-Max 0.19 mA
Supply Voltage-Max (Vsup) 1.9 V
Supply Voltage-Min (Vsup) 1.7 V
Supply Voltage-Nom (Vsup) 1.8 V
Surface Mount YES
Technology CMOS
Temperature Grade OTHER
Terminal Finish Tin/Silver/Copper (Sn96.5Ag3.0Cu0.5)
Terminal Form BALL
Terminal Pitch 0.8 mm
Terminal Position BOTTOM
Time@Peak Reflow Temperature-Max (s) 20
Width 8 mm

Alternate Parts for H5PS1G43EFR-E3

This table gives cross-reference parts and alternative options found for H5PS1G43EFR-E3. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of H5PS1G43EFR-E3, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.

Part Number Description Manufacturer Compare
HY5PS1G431CFP-E3 DDR DRAM, 256MX4, 0.6ns, CMOS, PBGA60, ROHS COMPLIANT, FBGA-60 SK Hynix Inc H5PS1G43EFR-E3 vs HY5PS1G431CFP-E3
HY5PS1G431CFR-E3 DDR DRAM, 256MX4, 0.6ns, CMOS, PBGA60, ROHS COMPLIANT, FBGA-60 SK Hynix Inc H5PS1G43EFR-E3 vs HY5PS1G431CFR-E3
Part Number Description Manufacturer Compare
V59C1G01408QBLF5I DDR DRAM, 256MX4, CMOS, PBGA60, ROHS COMPLIANT, FBGA-60 ProMOS Technologies Inc H5PS1G43EFR-E3 vs V59C1G01408QBLF5I
K4T1G044QC-ZCE60 DDR DRAM, 256MX4, 0.45ns, CMOS, PBGA60, ROHS COMPLIANT, FBGA-60 Samsung Semiconductor H5PS1G43EFR-E3 vs K4T1G044QC-ZCE60
MT47H256M4HV-3EAT:E DDR DRAM, 256MX4, 0.45ns, CMOS, PBGA60, 8 X 11.50 MM, FBGA-60 Micron Technology Inc H5PS1G43EFR-E3 vs MT47H256M4HV-3EAT:E
V59C1G01408QBLJ3H DDR DRAM, 256MX4, CMOS, PBGA60, GREEN, FBGA-60 ProMOS Technologies Inc H5PS1G43EFR-E3 vs V59C1G01408QBLJ3H
MT47H256M4HV-3LIT:G DDR DRAM, 256MX4, 0.45ns, CMOS, PBGA60, 8 X 11.50 MM, FBGA-60 Micron Technology Inc H5PS1G43EFR-E3 vs MT47H256M4HV-3LIT:G
V59C1G01408QBLF5 DDR DRAM, 256MX4, CMOS, PBGA60, ROHS COMPLIANT, FBGA-60 ProMOS Technologies Inc H5PS1G43EFR-E3 vs V59C1G01408QBLF5
MT47H256M4HQ-25IT 256MX4 DDR DRAM, 0.35ns, PBGA60, 8 X 11.50 MM, ROHS COMPLIANT, FBGA-60 Micron Technology Inc H5PS1G43EFR-E3 vs MT47H256M4HQ-25IT
MT47H256M4JN-25IT:H DDR DRAM, 256MX4, 0.4ns, CMOS, PBGA60, 8 X 10 MM, FBGA-60 Micron Technology Inc H5PS1G43EFR-E3 vs MT47H256M4JN-25IT:H
V59C1G01408QBLF3E DDR DRAM, 256MX4, CMOS, PBGA60, ROHS COMPLIANT, FBGA-60 ProMOS Technologies Inc H5PS1G43EFR-E3 vs V59C1G01408QBLF3E
K4T1G044QE-HCLE6 DDR DRAM, 256MX4, 0.45ns, CMOS, PBGA60, HALOGEN FREE AND ROHS COMPLIANT, FBGA-60 Samsung Semiconductor H5PS1G43EFR-E3 vs K4T1G044QE-HCLE6

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