Part Details for H5N2512FN-E by Renesas Electronics Corporation
Overview of H5N2512FN-E by Renesas Electronics Corporation
- Distributor Offerings: (2 listings)
- Number of FFF Equivalents: (0 replacements)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (0 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Available Datasheets
| Part # | Manufacturer | Description | Datasheet |
|---|---|---|---|
| H5N2512FN-E | Renesas Electronics Corporation | N Channel MOSFET High Speed Power Switching, TO-220FN, /Tube |
Price & Stock for H5N2512FN-E
| Part # | Distributor | Description | Stock | Price | Buy | |
|---|---|---|---|---|---|---|
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DISTI #
2156-H5N2512FN-E-ND
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DigiKey | N-CHANNEL POWER MOSFET Min Qty: 82 Lead time: 1 Weeks Container: Bulk MARKETPLACE PRODUCT |
2637 In Stock |
|
$3.6600 | Buy Now |
|
|
Rochester Electronics | H5N2512 - Power Field-Effect Transistor, 18A, 250V, N-Channel MOSFET ' RoHS: Compliant Status: Obsolete Min Qty: 1 | 2637 |
|
$2.9900 / $3.5200 | Buy Now |
Part Details for H5N2512FN-E
H5N2512FN-E CAD Models
H5N2512FN-E Part Data Attributes
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H5N2512FN-E
Renesas Electronics Corporation
Buy Now
Datasheet
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Compare Parts:
H5N2512FN-E
Renesas Electronics Corporation
N Channel MOSFET High Speed Power Switching, TO-220FN, /Tube
|
| Pbfree Code | Yes | |
| Rohs Code | Yes | |
| Part Life Cycle Code | Obsolete | |
| Ihs Manufacturer | RENESAS TECHNOLOGY CORP | |
| Part Package Code | TO-220FN | |
| Package Description | TO-220FN, 3 PIN | |
| Pin Count | 4 | |
| Manufacturer Package Code | PRSS0003AB | |
| Reach Compliance Code | unknown | |
| ECCN Code | EAR99 | |
| Factory Lead Time | 4 Weeks | |
| Samacsys Manufacturer | Renesas Electronics | |
| Case Connection | ISOLATED | |
| Configuration | SINGLE WITH BUILT-IN DIODE | |
| DS Breakdown Voltage-Min | 250 V | |
| Drain Current-Max (ID) | 18 A | |
| Drain-source On Resistance-Max | 0.105 Ω | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| JEDEC-95 Code | TO-220AB | |
| JESD-30 Code | R-PSFM-T3 | |
| Number of Elements | 1 | |
| Number of Terminals | 3 | |
| Operating Mode | ENHANCEMENT MODE | |
| Operating Temperature-Max | 150 °C | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | RECTANGULAR | |
| Package Style | FLANGE MOUNT | |
| Peak Reflow Temperature (Cel) | NOT SPECIFIED | |
| Polarity/Channel Type | N-CHANNEL | |
| Power Dissipation-Max (Abs) | 35 W | |
| Pulsed Drain Current-Max (IDM) | 72 A | |
| Qualification Status | Not Qualified | |
| Surface Mount | NO | |
| Terminal Form | THROUGH-HOLE | |
| Terminal Position | SINGLE | |
| Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED | |
| Transistor Application | SWITCHING | |
| Transistor Element Material | SILICON |