There are no models available for this part yet.
Overview of H5DU5182ETR-J3C by SK Hynix Inc
Note: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
- Distributor Offerings: ( 0 listings )
- Number of FFF Equivalents: ( 10 replacements )
- CAD Models: ( Request Part )
- Number of Functional Equivalents: ( 10 options )
- Part Data Attributes ( Available )
- Reference Designs: ( Not Available )
Where used in Applications:
Education and Research
Consumer Electronics
Computing and Data Storage
Healthcare
CAD Models for H5DU5182ETR-J3C by SK Hynix Inc
Part Data Attributes for H5DU5182ETR-J3C by SK Hynix Inc
|
|
|
|---|---|
|
Rohs Code
|
Yes
|
|
Part Life Cycle Code
|
Obsolete
|
|
Ihs Manufacturer
|
SK HYNIX INC
|
|
Part Package Code
|
BGA
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|
Package Description
|
VBGA, TSSOP66,.46
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|
Pin Count
|
60
|
|
Reach Compliance Code
|
unknown
|
|
ECCN Code
|
EAR99
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|
HTS Code
|
8542.32.00.28
|
|
Access Mode
|
FOUR BANK PAGE BURST
|
|
Access Time-Max
|
0.7 ns
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|
Additional Feature
|
AUTO/SELF REFRESH
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|
Clock Frequency-Max (fCLK)
|
166 MHz
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|
I/O Type
|
COMMON
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|
Interleaved Burst Length
|
2,4,8
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|
JESD-30 Code
|
R-PBGA-B60
|
|
JESD-609 Code
|
e6
|
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Length
|
12 mm
|
|
Memory Density
|
536870912 bit
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Memory IC Type
|
DDR1 DRAM
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Memory Width
|
8
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Number of Functions
|
1
|
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Number of Ports
|
1
|
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Number of Terminals
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60
|
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Number of Words
|
67108864 words
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|
Number of Words Code
|
64000000
|
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Operating Mode
|
SYNCHRONOUS
|
|
Operating Temperature-Max
|
70 °C
|
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Operating Temperature-Min
|
|
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Organization
|
64MX8
|
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Output Characteristics
|
3-STATE
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Package Body Material
|
PLASTIC/EPOXY
|
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Package Code
|
VBGA
|
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Package Equivalence Code
|
TSSOP66,.46
|
|
Package Shape
|
RECTANGULAR
|
|
Package Style
|
GRID ARRAY, VERY THIN PROFILE
|
|
Peak Reflow Temperature (Cel)
|
260
|
|
Qualification Status
|
Not Qualified
|
|
Refresh Cycles
|
8192
|
|
Seated Height-Max
|
1 mm
|
|
Self Refresh
|
YES
|
|
Sequential Burst Length
|
2,4,8
|
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Standby Current-Max
|
0.005 A
|
|
Supply Current-Max
|
0.24 mA
|
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Supply Voltage-Max (Vsup)
|
2.7 V
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Supply Voltage-Min (Vsup)
|
2.3 V
|
|
Supply Voltage-Nom (Vsup)
|
2.5 V
|
|
Surface Mount
|
YES
|
|
Technology
|
CMOS
|
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Temperature Grade
|
COMMERCIAL
|
|
Terminal Finish
|
Tin/Bismuth (Sn98Bi2)
|
|
Terminal Form
|
BALL
|
|
Terminal Pitch
|
1 mm
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Terminal Position
|
BOTTOM
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|
Time@Peak Reflow Temperature-Max (s)
|
20
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Width
|
8 mm
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Alternate Parts for H5DU5182ETR-J3C
This table gives cross-reference parts and alternative options found for H5DU5182ETR-J3C. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of H5DU5182ETR-J3C, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
| Part Number | Description | Manufacturer | Compare |
|---|---|---|---|
| K4H510838C-UCB3 | DDR DRAM, 64MX8, 0.7ns, CMOS, PDSO66, | Samsung Semiconductor | H5DU5182ETR-J3C vs K4H510838C-UCB3 |
| K4H510838J-LLB30 | DDR DRAM, 64MX8, 0.7ns, CMOS, PDSO66, 0.400 X 0.875 INCH, 0.65 MM PITCH, HALOGEN FREE AND ROHS COMPLIANT, TSOP2-66 | Samsung Semiconductor | H5DU5182ETR-J3C vs K4H510838J-LLB30 |
| K4H510838B-UCB30 | DDR DRAM, 64MX8, 0.7ns, CMOS, PDSO66, 0.400 X 0.875 INCH, 0.65 MM PITCH, LEAD FREE, TSOP2-66 | Samsung Semiconductor | H5DU5182ETR-J3C vs K4H510838B-UCB30 |
| K4H510838B-UCB3 | DDR DRAM, 64MX8, 0.7ns, CMOS, PDSO66 | Samsung Semiconductor | H5DU5182ETR-J3C vs K4H510838B-UCB3 |
| K4H510838B-TCB3 | DDR DRAM, 64MX8, 0.7ns, CMOS, PDSO66, 0.400 X 0.875 INCH, 0.65 MM PITCH, TSOP2-66 | Samsung Semiconductor | H5DU5182ETR-J3C vs K4H510838B-TCB3 |
| K4H510838C-UCB30 | DDR DRAM, 64MX8, 0.7ns, CMOS, PDSO66, ROHS COMPLIANT, TSOP2-66 | Samsung Semiconductor | H5DU5182ETR-J3C vs K4H510838C-UCB30 |
| K4H510838B-TCB30 | DDR DRAM, 64MX8, 0.7ns, CMOS, PDSO66, 0.400 X 0.875 INCH, 0.65 MM PITCH, TSOP2-66 | Samsung Semiconductor | H5DU5182ETR-J3C vs K4H510838B-TCB30 |
| K4H510838B-ULB30 | DDR DRAM, 64MX8, 0.7ns, CMOS, PDSO66, 0.400 X 0.875 INCH, 0.65 MM PITCH, LEAD FREE, TSOP2-66 | Samsung Semiconductor | H5DU5182ETR-J3C vs K4H510838B-ULB30 |
| K4H510838B-TLB30 | DDR DRAM, 64MX8, 0.7ns, CMOS, PDSO66, 0.400 X 0.875 INCH, 0.65 MM PITCH, TSOP2-66 | Samsung Semiconductor | H5DU5182ETR-J3C vs K4H510838B-TLB30 |
| K4H510838D-ULB3T | Cache DRAM Module, 64MX8, 0.7ns, CMOS, PDSO66 | Samsung Semiconductor | H5DU5182ETR-J3C vs K4H510838D-ULB3T |