Part Details for GT8J102SM by Toshiba America Electronic Components
Overview of GT8J102SM by Toshiba America Electronic Components
- Distributor Offerings: (0 listings)
- Number of FFF Equivalents: (0 crosses)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (10 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
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Part Details for GT8J102SM
GT8J102SM CAD Models
GT8J102SM Part Data Attributes:
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GT8J102SM
Toshiba America Electronic Components
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Datasheet
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GT8J102SM
Toshiba America Electronic Components
TRANSISTOR 8 A, 600 V, N-CHANNEL IGBT, TO-220, TO-220SM, 2 PIN, Insulated Gate BIP Transistor
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| Rohs Code | No | |
| Part Life Cycle Code | Obsolete | |
| Ihs Manufacturer | TOSHIBA AMERICA ELECTRONIC COMPONENTS INC | |
| Part Package Code | SFM | |
| Package Description | TO-220SM, 2 PIN | |
| Pin Count | 3 | |
| Reach Compliance Code | unknown | |
| Additional Feature | HIGH SPEED | |
| Case Connection | COLLECTOR | |
| Collector Current-Max (IC) | 8 A | |
| Collector-Emitter Voltage-Max | 600 V | |
| Configuration | SINGLE | |
| Fall Time-Max (tf) | 350 ns | |
| JEDEC-95 Code | TO-220 | |
| JESD-30 Code | R-PSFM-T2 | |
| JESD-609 Code | e0 | |
| Number of Elements | 1 | |
| Number of Terminals | 2 | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | RECTANGULAR | |
| Package Style | FLANGE MOUNT | |
| Peak Reflow Temperature (Cel) | 240 | |
| Polarity/Channel Type | N-CHANNEL | |
| Power Dissipation Ambient-Max | 50 W | |
| Qualification Status | Not Qualified | |
| Surface Mount | NO | |
| Terminal Finish | TIN LEAD | |
| Terminal Form | THROUGH-HOLE | |
| Terminal Position | SINGLE | |
| Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED | |
| Transistor Application | POWER CONTROL | |
| Transistor Element Material | SILICON | |
| VCEsat-Max | 4 V |
Alternate Parts for GT8J102SM
This table gives cross-reference parts and alternative options found for GT8J102SM. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of GT8J102SM, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
| Part Number | Description | Manufacturer | Compare |
|---|---|---|---|
| HGTG30N60A4D | 75A, 600V, N-CHANNEL IGBT, TO-247 | Intersil Corporation | GT8J102SM vs HGTG30N60A4D |
| HGTG40N60B3 | 70A, 600V, N-CHANNEL IGBT, TO-247 | Intersil Corporation | GT8J102SM vs HGTG40N60B3 |
| IRG4PC30FDPBF | Insulated Gate Bipolar Transistor, 31A I(C), 600V V(BR)CES, N-Channel, TO-247AC, LEAD FREE, PLASTIC PACKAGE-3 | International Rectifier | GT8J102SM vs IRG4PC30FDPBF |
| HGTP3N60A4 | 17A, 600V, N-CHANNEL IGBT, TO-220AB | Intersil Corporation | GT8J102SM vs HGTP3N60A4 |
| IRG4PH30KPBF | Insulated Gate Bipolar Transistor, 20A I(C), 1200V V(BR)CES, N-Channel, TO-247AC, LEAD FREE PACKAGE-3 | International Rectifier | GT8J102SM vs IRG4PH30KPBF |
| SGP15N60 | Insulated Gate Bipolar Transistor, 31A I(C), 600V V(BR)CES, N-Channel, TO-220AB | Siemens | GT8J102SM vs SGP15N60 |
| HGTG30N60C3D | 63A, 600V, N-CHANNEL IGBT, TO-247 | Intersil Corporation | GT8J102SM vs HGTG30N60C3D |
| HGTP3N60A4D | Insulated Gate Bipolar Transistor, 17A I(C), 600V V(BR)CES, N-Channel, TO-220AB, | Fairchild Semiconductor Corporation | GT8J102SM vs HGTP3N60A4D |
| SGW20N60 | Insulated Gate Bipolar Transistor, 40A I(C), 600V V(BR)CES, N-Channel, TO-247AC | Siemens | GT8J102SM vs SGW20N60 |
| SGH30N60RUFDTU | Insulated Gate Bipolar Transistor, 48A I(C), 600V V(BR)CES, N-Channel, TO-3P, 3 PIN | Fairchild Semiconductor Corporation | GT8J102SM vs SGH30N60RUFDTU |