Part Details for GT80J101 by Toshiba America Electronic Components
Overview of GT80J101 by Toshiba America Electronic Components
- Distributor Offerings: (1 listing)
- Number of FFF Equivalents: (0 crosses)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (10 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Price & Stock for GT80J101
| Part # | Distributor | Description | Stock | Price | Buy | |
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Quest Components | 80 A, 600 V, N-CHANNEL IGBT, TO-3PL | 31 |
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$25.0000 / $26.0000 | Buy Now |
Part Details for GT80J101
GT80J101 CAD Models
GT80J101 Part Data Attributes:
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GT80J101
Toshiba America Electronic Components
Buy Now
Datasheet
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GT80J101
Toshiba America Electronic Components
TRANSISTOR 80 A, 600 V, N-CHANNEL IGBT, TO-3PL, TO-3PL, 3 PIN, Insulated Gate BIP Transistor
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| Rohs Code | No | |
| Part Life Cycle Code | Obsolete | |
| Ihs Manufacturer | TOSHIBA CORP | |
| Package Description | 2-10F1C, 3 PIN | |
| Pin Count | 3 | |
| Reach Compliance Code | unknown | |
| Additional Feature | HIGH SPEED | |
| Case Connection | COLLECTOR | |
| Collector Current-Max (IC) | 80 A | |
| Collector-Emitter Voltage-Max | 600 V | |
| Configuration | SINGLE | |
| Fall Time-Max (tf) | 400 ns | |
| JESD-30 Code | R-PSFM-T3 | |
| Number of Elements | 1 | |
| Number of Terminals | 3 | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | RECTANGULAR | |
| Package Style | FLANGE MOUNT | |
| Peak Reflow Temperature (Cel) | NOT SPECIFIED | |
| Polarity/Channel Type | N-CHANNEL | |
| Power Dissipation Ambient-Max | 200 W | |
| Qualification Status | Not Qualified | |
| Surface Mount | NO | |
| Terminal Form | THROUGH-HOLE | |
| Terminal Position | SINGLE | |
| Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED | |
| Transistor Application | POWER CONTROL | |
| Transistor Element Material | SILICON | |
| VCEsat-Max | 3.5 V |
Alternate Parts for GT80J101
This table gives cross-reference parts and alternative options found for GT80J101. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of GT80J101, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
| Part Number | Description | Manufacturer | Compare |
|---|---|---|---|
| HGT1S12N60B3DS | 27A, 600V, N-CHANNEL IGBT, TO-263AB | Intersil Corporation | GT80J101 vs HGT1S12N60B3DS |
| IRG4PC50UDPBF | Insulated Gate Bipolar Transistor, 55A I(C), 600V V(BR)CES, N-Channel, TO-247AC, LEAD FREE, PLASTIC PACKAGE-3 | International Rectifier | GT80J101 vs IRG4PC50UDPBF |
| HGTG30N60B3D | 600V, PT IGBT, 450-TUBE | onsemi | GT80J101 vs HGTG30N60B3D |
| HGTP7N60A4 | 34A, 600V, N-CHANNEL IGBT, TO-220AB | Intersil Corporation | GT80J101 vs HGTP7N60A4 |
| HGTG12N60C3D | 24A, 600V, N-CHANNEL IGBT, TO-247 | Intersil Corporation | GT80J101 vs HGTG12N60C3D |
| SGP30N60 | Insulated Gate Bipolar Transistor, 41A I(C), 600V V(BR)CES, N-Channel, TO-220AB | Siemens | GT80J101 vs SGP30N60 |
| HGTP3N60A4D | 17A, 600V, N-CHANNEL IGBT, TO-220AB | Intersil Corporation | GT80J101 vs HGTP3N60A4D |
| IRG4BC30KDPBF | Insulated Gate Bipolar Transistor, 28A I(C), 600V V(BR)CES, N-Channel, TO-220AB, LEAD FREE, PLASTIC PACKAGE-3 | International Rectifier | GT80J101 vs IRG4BC30KDPBF |
| SGP15N60 | Insulated Gate Bipolar Transistor, 31A I(C), 600V V(BR)CES, N-Channel, TO-220AB | Siemens | GT80J101 vs SGP15N60 |
| SGB15N60 | 31A, 600V, N-CHANNEL IGBT, TO-263AB, GREEN, PLASTIC, TO-263, 3 PIN | Rochester Electronics LLC | GT80J101 vs SGB15N60 |