Part Details for GT60M303 by Toshiba America Electronic Components
Overview of GT60M303 by Toshiba America Electronic Components
- Distributor Offerings: (1 listing)
- Number of FFF Equivalents: (0 crosses)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (0 crosses)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
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Applications
Automotive
Price & Stock for GT60M303
Part # | Distributor | Description | Stock | Price | Buy | |
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Chip1Cloud | INSULATED GATE BIPOLAR TRANSISTOR SILICON N CHANNEL IGBT | 6220 |
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RFQ |
Part Details for GT60M303
GT60M303 CAD Models
GT60M303 Part Data Attributes:
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GT60M303
Toshiba America Electronic Components
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Datasheet
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GT60M303
Toshiba America Electronic Components
TRANSISTOR 60 A, 900 V, N-CHANNEL IGBT, 2-21F2C, 3 PIN, Insulated Gate BIP Transistor
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Pbfree Code | No | |
Rohs Code | No | |
Part Life Cycle Code | Obsolete | |
Ihs Manufacturer | TOSHIBA CORP | |
Package Description | FLANGE MOUNT, R-PSFM-T3 | |
Pin Count | 3 | |
Reach Compliance Code | unknown | |
ECCN Code | EAR99 | |
HTS Code | 8541.29.00.95 | |
Additional Feature | HIGH SPEED | |
Case Connection | COLLECTOR | |
Collector Current-Max (IC) | 60 A | |
Collector-Emitter Voltage-Max | 900 V | |
Configuration | SINGLE WITH BUILT-IN DIODE | |
Fall Time-Max (tf) | 400 ns | |
Gate-Emitter Thr Voltage-Max | 6 V | |
Gate-Emitter Voltage-Max | 25 V | |
JESD-30 Code | R-PSFM-T3 | |
Number of Elements | 1 | |
Number of Terminals | 3 | |
Operating Temperature-Max | 150 °C | |
Package Body Material | PLASTIC/EPOXY | |
Package Shape | RECTANGULAR | |
Package Style | FLANGE MOUNT | |
Peak Reflow Temperature (Cel) | NOT SPECIFIED | |
Polarity/Channel Type | N-CHANNEL | |
Power Dissipation Ambient-Max | 170 W | |
Power Dissipation-Max (Abs) | 170 W | |
Qualification Status | Not Qualified | |
Rise Time-Max (tr) | 600 ns | |
Surface Mount | NO | |
Terminal Form | THROUGH-HOLE | |
Terminal Position | SINGLE | |
Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED | |
Transistor Application | POWER CONTROL | |
Transistor Element Material | SILICON | |
Turn-off Time-Nom (toff) | 600 ns | |
Turn-on Time-Nom (ton) | 460 ns | |
VCEsat-Max | 2.7 V |