Datasheets
GT60M301 by: Toshiba America Electronic Components

TRANSISTOR 60 A, 900 V, N-CHANNEL IGBT, TO-3PLH, TO-3PLH, 3 PIN, Insulated Gate BIP Transistor

Part Details for GT60M301 by Toshiba America Electronic Components

Overview of GT60M301 by Toshiba America Electronic Components

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Price & Stock for GT60M301

Part # Distributor Description Stock Price Buy
Chip1Cloud N CHANNEL MOS TYPE (HIGH POWER SWITHCING APPLICATIONS) 2000
RFQ

Part Details for GT60M301

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GT60M301 Part Data Attributes

GT60M301 Toshiba America Electronic Components
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GT60M301 Toshiba America Electronic Components TRANSISTOR 60 A, 900 V, N-CHANNEL IGBT, TO-3PLH, TO-3PLH, 3 PIN, Insulated Gate BIP Transistor
Part Life Cycle Code Obsolete
Ihs Manufacturer TOSHIBA CORP
Part Package Code TO-3PLH
Package Description 2-21F2C, 3 PIN
Pin Count 2
Reach Compliance Code unknown
Additional Feature HIGH SPEED
Collector Current-Max (IC) 60 A
Collector-Emitter Voltage-Max 900 V
Configuration SINGLE
JESD-30 Code R-PSFM-T3
Number of Elements 1
Number of Terminals 3
Operating Temperature-Max 150 °C
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style FLANGE MOUNT
Polarity/Channel Type N-CHANNEL
Qualification Status Not Qualified
Surface Mount NO
Terminal Form THROUGH-HOLE
Terminal Position SINGLE
Transistor Application POWER CONTROL
Transistor Element Material SILICON

Alternate Parts for GT60M301

This table gives cross-reference parts and alternative options found for GT60M301. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of GT60M301, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.

Part Number Description Manufacturer Compare
APT65GL100BN 65A, 1000V, N-CHANNEL IGBT, TO-247 Microsemi Corporation GT60M301 vs APT65GL100BN
IXSH25N100A Insulated Gate Bipolar Transistor, 50A I(C), 1000V V(BR)CES, N-Channel, TO-247AD, IXYS Corporation GT60M301 vs IXSH25N100A
SGL60N90D Insulated Gate Bipolar Transistor, 60A I(C), 900V V(BR)CES, N-Channel, TO-264, TO-264, 3 PIN Samsung Semiconductor GT60M301 vs SGL60N90D

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