Part Details for GT60M301 by Toshiba America Electronic Components
Overview of GT60M301 by Toshiba America Electronic Components
- Distributor Offerings: (1 listing)
- Number of FFF Equivalents: (0 crosses)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (3 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Price & Stock for GT60M301
Part # | Distributor | Description | Stock | Price | Buy | |
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Chip1Cloud | N CHANNEL MOS TYPE (HIGH POWER SWITHCING APPLICATIONS) | 2000 |
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RFQ |
Part Details for GT60M301
GT60M301 CAD Models
GT60M301 Part Data Attributes
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GT60M301
Toshiba America Electronic Components
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Datasheet
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GT60M301
Toshiba America Electronic Components
TRANSISTOR 60 A, 900 V, N-CHANNEL IGBT, TO-3PLH, TO-3PLH, 3 PIN, Insulated Gate BIP Transistor
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Part Life Cycle Code | Obsolete | |
Ihs Manufacturer | TOSHIBA CORP | |
Part Package Code | TO-3PLH | |
Package Description | 2-21F2C, 3 PIN | |
Pin Count | 2 | |
Reach Compliance Code | unknown | |
Additional Feature | HIGH SPEED | |
Collector Current-Max (IC) | 60 A | |
Collector-Emitter Voltage-Max | 900 V | |
Configuration | SINGLE | |
JESD-30 Code | R-PSFM-T3 | |
Number of Elements | 1 | |
Number of Terminals | 3 | |
Operating Temperature-Max | 150 °C | |
Package Body Material | PLASTIC/EPOXY | |
Package Shape | RECTANGULAR | |
Package Style | FLANGE MOUNT | |
Polarity/Channel Type | N-CHANNEL | |
Qualification Status | Not Qualified | |
Surface Mount | NO | |
Terminal Form | THROUGH-HOLE | |
Terminal Position | SINGLE | |
Transistor Application | POWER CONTROL | |
Transistor Element Material | SILICON |
Alternate Parts for GT60M301
This table gives cross-reference parts and alternative options found for GT60M301. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of GT60M301, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
Part Number | Description | Manufacturer | Compare |
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APT65GL100BN | 65A, 1000V, N-CHANNEL IGBT, TO-247 | Microsemi Corporation | GT60M301 vs APT65GL100BN |
IXSH25N100A | Insulated Gate Bipolar Transistor, 50A I(C), 1000V V(BR)CES, N-Channel, TO-247AD, | IXYS Corporation | GT60M301 vs IXSH25N100A |
SGL60N90D | Insulated Gate Bipolar Transistor, 60A I(C), 900V V(BR)CES, N-Channel, TO-264, TO-264, 3 PIN | Samsung Semiconductor | GT60M301 vs SGL60N90D |