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Part Details for GT50JR22 by Toshiba America Electronic Components
Overview of GT50JR22 by Toshiba America Electronic Components
- Distributor Offerings: (4 listings)
- Number of FFF Equivalents: (0 crosses)
- CAD Models: (Available)
- Number of Functional Equivalents: (0 crosses)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Applications
Industrial Automation
Energy and Power Systems
Renewable Energy
Price & Stock for GT50JR22
| Part # | Distributor | Description | Stock | Price | Buy | |
|---|---|---|---|---|---|---|
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DISTI #
GT50JR22
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TME | Transistor: IGBT, 600V, 44A, 115W, TO3PN Min Qty: 1 | 278 |
|
$3.4800 / $4.8700 | Buy Now |
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Chip1Cloud | Trans IGBT Chip N-CH 600V 50A 230000mW 3-Pin(3+Tab) TO-3PN | 5632 |
|
RFQ | |
|
|
CHIPMALL.COM LIMITED | TO-3P IGBTs ROHS | 146 |
|
$0.7836 / $1.3069 | Buy Now |
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|
LCSC | TO-3P IGBTs ROHS | 146 |
|
$0.7996 / $1.3336 | Buy Now |
Part Details for GT50JR22
GT50JR22 CAD Models
GT50JR22 Part Data Attributes:
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GT50JR22
Toshiba America Electronic Components
Buy Now
Datasheet
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Compare Parts:
GT50JR22
Toshiba America Electronic Components
Discrete IGBTs, GT50JR22
|
| Rohs Code | Yes | |
| Part Life Cycle Code | Active | |
| Ihs Manufacturer | TOSHIBA CORP | |
| Package Description | , | |
| Reach Compliance Code | unknown | |
| ECCN Code | EAR99 | |
| Samacsys Manufacturer | Toshiba | |
| Collector Current-Max (IC) | 50 A | |
| Collector-Emitter Voltage-Max | 600 V | |
| Configuration | SINGLE WITH BUILT-IN DIODE | |
| Fall Time-Max (tf) | 180 ns | |
| Gate-Emitter Voltage-Max | 25 V | |
| JESD-30 Code | R-PSFM-T3 | |
| Number of Elements | 1 | |
| Number of Terminals | 3 | |
| Operating Temperature-Max | 175 °C | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | RECTANGULAR | |
| Package Style | FLANGE MOUNT | |
| Peak Reflow Temperature (Cel) | NOT SPECIFIED | |
| Polarity/Channel Type | N-CHANNEL | |
| Power Dissipation-Max (Abs) | 230 W | |
| Surface Mount | NO | |
| Terminal Form | THROUGH-HOLE | |
| Terminal Position | SINGLE | |
| Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED | |
| Transistor Application | POWER CONTROL | |
| Transistor Element Material | SILICON | |
| Turn-off Time-Nom (toff) | 330 ns | |
| Turn-on Time-Nom (ton) | 250 ns | |
| VCEsat-Max | 2.2 V |