Datasheets
GT30J121(Q) by: Toshiba America Electronic Components

IGBT Transistors 600V/30A DIS

Part Details for GT30J121(Q) by Toshiba America Electronic Components

Results Overview of GT30J121(Q) by Toshiba America Electronic Components

Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.

Applications Consumer Electronics Energy and Power Systems Renewable Energy

GT30J121(Q) Information

GT30J121(Q) by Toshiba America Electronic Components is an IGBT.
IGBTs are under the broader part category of Transistors.

A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.

Price & Stock for GT30J121(Q)

Part # Distributor Description Stock Price Buy
DISTI # GT30J121(Q)-ND
DigiKey IGBT 600V 30A 170W TO3PN Min Qty: 1 Lead time: 18 Weeks Container: Tube 122
In Stock
  • 1 $4.2400
  • 10 $2.7930
  • 25 $2.4104
  • 100 $1.9737
  • 300 $1.7202
  • 500 $1.6241
  • 1,000 $1.5250
$1.5250 / $4.2400 Buy Now
DISTI # GT30J121(Q)
Avnet Americas IGBT N-Channel 600V 3-Pin TO-3P(N) - Rail/Tube (Alt: GT30J121(Q)) RoHS: Compliant Min Qty: 100 Package Multiple: 100 Lead time: 18 Weeks, 0 Days Container: Tube 0
  • 100 $1.8666
  • 200 $1.8178
  • 400 $1.7324
  • 600 $1.6836
  • 800 $1.6470
$1.6470 / $1.8666 Buy Now
DISTI # 757-GT30J121(Q)
Mouser Electronics IGBTs 600V/30A DIS RoHS: Compliant 114
  • 1 $3.8600
  • 10 $2.6100
  • 20 $2.2700
  • 50 $2.2400
  • 100 $1.8700
  • 200 $1.6500
  • 500 $1.5700
  • 1,000 $1.5200
$1.5200 / $3.8600 Buy Now
DISTI # E02:0323_05873833
Arrow Electronics Trans IGBT Chip N-CH 600V 30A 170W 3-Pin(3+Tab) TO-3PN Sack Min Qty: 200 Package Multiple: 100 Lead time: 20 Weeks Date Code: 2303 Europe - 200
  • 200 $1.2712
  • 300 $1.2580
  • 500 $1.2570
$1.2570 / $1.2712 Buy Now
DISTI # 69205938
Verical Trans IGBT Chip N-CH 600V 30A 170W 3-Pin(3+Tab) TO-3PN Sack Min Qty: 200 Package Multiple: 200 Date Code: 2303 Americas - 200
  • 200 $1.2698
  • 300 $1.2567
  • 500 $1.2556
$1.2556 / $1.2698 Buy Now
DISTI # GT30J121Q
TME Transistor: IGBT, 600V, 30A, 170W, TO3PN Min Qty: 1 39
  • 1 $3.2300
  • 3 $2.9100
  • 10 $2.5800
  • 25 $2.3100
$2.3100 / $3.2300 Buy Now
DISTI # GT30J121(Q)
EBV Elektronik IGBT NChannel 600V 3Pin TO3PN (Alt: GT30J121(Q)) RoHS: Compliant Min Qty: 100 Package Multiple: 100 Lead time: 21 Weeks, 0 Days EBV - 0
Buy Now

Part Details for GT30J121(Q)

GT30J121(Q) Part Data Attributes

GT30J121(Q) Toshiba America Electronic Components
Buy Now Datasheet
Compare Parts:
GT30J121(Q) Toshiba America Electronic Components IGBT Transistors 600V/30A DIS
Select a part to compare:
Part Life Cycle Code Active
Ihs Manufacturer TOSHIBA CORP
Reach Compliance Code unknown
Factory Lead Time 18 Weeks
Samacsys Manufacturer Toshiba

GT30J121(Q) Frequently Asked Questions (FAQ)

  • A recommended PCB layout for optimal thermal performance would be to have a large copper area on the top and bottom layers, connected to the drain pin, to dissipate heat efficiently. Additionally, using thermal vias to connect the top and bottom layers can further improve heat dissipation.

  • To ensure the device is properly biased, make sure to follow the recommended biasing circuit and voltage levels as specified in the datasheet. Additionally, ensure that the input and output capacitors are properly selected and placed to minimize parasitic inductance and capacitance.

  • Critical parameters to monitor during operation to prevent overheating include the device temperature, drain-source voltage, and drain current. Monitoring these parameters can help prevent overheating and ensure reliable operation.

  • To select the correct gate resistor value, consider the gate drive voltage, gate charge, and switching frequency of your application. A general rule of thumb is to choose a gate resistor value that limits the gate current to 1-2 amps. However, the optimal value may vary depending on the specific application requirements.

  • To prevent electrostatic discharge (ESD) damage, it is recommended to use ESD protection devices such as TVS diodes or ESD protection arrays on the input and output pins. Additionally, follow proper handling and storage procedures to minimize the risk of ESD damage.