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Part Details for GT25J101 by Toshiba America Electronic Components
Results Overview of GT25J101 by Toshiba America Electronic Components
- Distributor Offerings: (0 listings)
- Number of FFF Equivalents: (0 replacements)
- CAD Models: (Available)
- Number of Functional Equivalents: (10 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Applications
Consumer Electronics
Energy and Power Systems
Renewable Energy
GT25J101 Information
GT25J101 by Toshiba America Electronic Components is an IGBT.
IGBTs are under the broader part category of Transistors.
A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.
Part Details for GT25J101
GT25J101 CAD Models
GT25J101 Part Data Attributes
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GT25J101
Toshiba America Electronic Components
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Datasheet
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GT25J101
Toshiba America Electronic Components
TRANSISTOR 25 A, 600 V, N-CHANNEL IGBT, TO-3PN, TO-3PN, 3 PIN, Insulated Gate BIP Transistor
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| Rohs Code | No | |
| Part Life Cycle Code | Obsolete | |
| Ihs Manufacturer | TOSHIBA CORP | |
| Package Description | FLANGE MOUNT, R-PSFM-T3 | |
| Pin Count | 3 | |
| Reach Compliance Code | unknown | |
| ECCN Code | EAR99 | |
| HTS Code | 8541.29.00.95 | |
| Samacsys Manufacturer | Toshiba | |
| Additional Feature | HIGH SPEED | |
| Case Connection | COLLECTOR | |
| Collector Current-Max (IC) | 25 A | |
| Collector-Emitter Voltage-Max | 600 V | |
| Configuration | SINGLE | |
| Fall Time-Max (tf) | 350 ns | |
| Gate-Emitter Thr Voltage-Max | 6 V | |
| Gate-Emitter Voltage-Max | 20 V | |
| JESD-30 Code | R-PSFM-T3 | |
| JESD-609 Code | e0 | |
| Number of Elements | 1 | |
| Number of Terminals | 3 | |
| Operating Temperature-Max | 150 °C | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | RECTANGULAR | |
| Package Style | FLANGE MOUNT | |
| Polarity/Channel Type | N-CHANNEL | |
| Power Dissipation Ambient-Max | 150 W | |
| Power Dissipation-Max (Abs) | 150 W | |
| Qualification Status | Not Qualified | |
| Rise Time-Max (tr) | 600 ns | |
| Surface Mount | NO | |
| Terminal Finish | Tin/Lead (Sn/Pb) | |
| Terminal Form | THROUGH-HOLE | |
| Terminal Position | SINGLE | |
| Transistor Application | MOTOR CONTROL | |
| Transistor Element Material | SILICON | |
| Turn-off Time-Nom (toff) | 500 ns | |
| Turn-on Time-Nom (ton) | 400 ns | |
| VCEsat-Max | 4 V |
Alternate Parts for GT25J101
This table gives cross-reference parts and alternative options found for GT25J101. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of GT25J101, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
| Part Number | Manufacturer | Composite Price | Description | Compare |
|---|---|---|---|---|
| HGT1S3N60B3S | Fairchild Semiconductor Corporation | Check for Price | Insulated Gate Bipolar Transistor, 7A I(C), 600V V(BR)CES, N-Channel, TO-263AB, | GT25J101 vs HGT1S3N60B3S |
| IRGBC40U | International Rectifier | Check for Price | Insulated Gate Bipolar Transistor, 40A I(C), 600V V(BR)CES, N-Channel, TO-220AB, TO-220AB, 3 PIN | GT25J101 vs IRGBC40U |
| HGTP1N120CN | Fairchild Semiconductor Corporation | Check for Price | Insulated Gate Bipolar Transistor, 6.2A I(C), 1200V V(BR)CES, N-Channel, TO-220AB | GT25J101 vs HGTP1N120CN |
| IXGH25N100U1 | Littelfuse Inc | Check for Price | Insulated Gate Bipolar Transistor, 50A I(C), 1000V V(BR)CES, N-Channel, TO-247AD, TO-247AD, 3 PIN | GT25J101 vs IXGH25N100U1 |
| IXGH28N60B3D1 | Littelfuse Inc | $5.1639 | Insulated Gate Bipolar Transistor, | GT25J101 vs IXGH28N60B3D1 |
| SKA06N60XKSA1 | Infineon Technologies AG | Check for Price | Insulated Gate Bipolar Transistor, 9A I(C), 600V V(BR)CES, N-Channel, TO-220AB, GREEN, PLASTIC, TO-220, FULL PACK-3 | GT25J101 vs SKA06N60XKSA1 |
| IRG4BC15MDPBF | International Rectifier | Check for Price | Insulated Gate Bipolar Transistor, 14A I(C), 600V V(BR)CES, N-Channel, TO-220AB, LEAD FREE PACKAGE-3 | GT25J101 vs IRG4BC15MDPBF |
| IXSH45N120 | IXYS Corporation | Check for Price | Insulated Gate Bipolar Transistor, 75A I(C), 1200V V(BR)CES, N-Channel, TO-247AD, TO-247AD, 3 PIN | GT25J101 vs IXSH45N120 |
| MG75J1BS11 | Toshiba America Electronic Components | Check for Price | TRANSISTOR 75 A, 600 V, N-CHANNEL IGBT, 2-33F2A, 3 PIN, Insulated Gate BIP Transistor | GT25J101 vs MG75J1BS11 |
| IXSH35N120B | IXYS Corporation | Check for Price | Insulated Gate Bipolar Transistor, 70A I(C), 1200V V(BR)CES, N-Channel, TO-247AD, TO-247AD, 3 PIN | GT25J101 vs IXSH35N120B |