Part Details for GT25G102 by Toshiba America Electronic Components
Overview of GT25G102 by Toshiba America Electronic Components
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Applications
Industrial Automation
Electronic Manufacturing
Part Details for GT25G102
GT25G102 CAD Models
GT25G102 Part Data Attributes:
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GT25G102
Toshiba America Electronic Components
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Datasheet
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GT25G102
Toshiba America Electronic Components
TRANSISTOR 25 A, 400 V, N-CHANNEL IGBT, 2-10S1C, 3 PIN, Insulated Gate BIP Transistor
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| Pbfree Code | No | |
| Rohs Code | No | |
| Part Life Cycle Code | Obsolete | |
| Ihs Manufacturer | TOSHIBA CORP | |
| Package Description | IN-LINE, R-PSIP-T3 | |
| Pin Count | 3 | |
| Reach Compliance Code | unknown | |
| ECCN Code | EAR99 | |
| HTS Code | 8541.29.00.95 | |
| Case Connection | COLLECTOR | |
| Collector Current-Max (IC) | 25 A | |
| Collector-Emitter Voltage-Max | 400 V | |
| Configuration | SINGLE | |
| Fall Time-Max (tf) | 6000 ns | |
| Gate-Emitter Thr Voltage-Max | 5 V | |
| Gate-Emitter Voltage-Max | 20 V | |
| JESD-30 Code | R-PSIP-T3 | |
| JESD-609 Code | e0 | |
| Number of Elements | 1 | |
| Number of Terminals | 3 | |
| Operating Temperature-Max | 150 °C | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | RECTANGULAR | |
| Package Style | IN-LINE | |
| Polarity/Channel Type | N-CHANNEL | |
| Power Dissipation Ambient-Max | 75 W | |
| Power Dissipation-Max (Abs) | 75 W | |
| Qualification Status | Not Qualified | |
| Rise Time-Max (tr) | 500 ns | |
| Surface Mount | NO | |
| Terminal Finish | TIN LEAD | |
| Terminal Form | THROUGH-HOLE | |
| Terminal Position | SINGLE | |
| Transistor Application | GENERAL PURPOSE SWITCHING | |
| Transistor Element Material | SILICON | |
| VCEsat-Max | 8 V |