Part Details for GT20G101 by Toshiba America Electronic Components
Overview of GT20G101 by Toshiba America Electronic Components
- Distributor Offerings: (1 listing)
- Number of FFF Equivalents: (0 crosses)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (4 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
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Applications
Space Technology
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Transportation and Logistics
Renewable Energy
Automotive
Robotics and Drones
Price & Stock for GT20G101
| Part # | Distributor | Description | Stock | Price | Buy | |
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Bristol Electronics | 41 |
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RFQ |
Part Details for GT20G101
GT20G101 CAD Models
GT20G101 Part Data Attributes:
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GT20G101
Toshiba America Electronic Components
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Datasheet
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GT20G101
Toshiba America Electronic Components
TRANSISTOR 20 A, 400 V, N-CHANNEL IGBT, 2-10S1C, 3 PIN, Insulated Gate BIP Transistor
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| Rohs Code | No | |
| Part Life Cycle Code | Obsolete | |
| Ihs Manufacturer | TOSHIBA CORP | |
| Package Description | IN-LINE, R-PSIP-T3 | |
| Pin Count | 3 | |
| Reach Compliance Code | unknown | |
| ECCN Code | EAR99 | |
| HTS Code | 8541.29.00.95 | |
| Case Connection | COLLECTOR | |
| Collector Current-Max (IC) | 20 A | |
| Collector-Emitter Voltage-Max | 400 V | |
| Configuration | SINGLE | |
| Fall Time-Max (tf) | 6000 ns | |
| Gate-Emitter Thr Voltage-Max | 7 V | |
| Gate-Emitter Voltage-Max | 25 V | |
| JESD-30 Code | R-PSIP-T3 | |
| JESD-609 Code | e0 | |
| Number of Elements | 1 | |
| Number of Terminals | 3 | |
| Operating Temperature-Max | 150 °C | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | RECTANGULAR | |
| Package Style | IN-LINE | |
| Polarity/Channel Type | N-CHANNEL | |
| Power Dissipation Ambient-Max | 60 W | |
| Power Dissipation-Max (Abs) | 60 W | |
| Qualification Status | Not Qualified | |
| Rise Time-Max (tr) | 500 ns | |
| Surface Mount | NO | |
| Terminal Finish | Tin/Lead (Sn/Pb) | |
| Terminal Form | THROUGH-HOLE | |
| Terminal Position | SINGLE | |
| Transistor Application | GENERAL PURPOSE SWITCHING | |
| Transistor Element Material | SILICON | |
| VCEsat-Max | 8 V |
Alternate Parts for GT20G101
This table gives cross-reference parts and alternative options found for GT20G101. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of GT20G101, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
| Part Number | Description | Manufacturer | Compare |
|---|---|---|---|
| SGI25N40 | Insulated Gate Bipolar Transistor, 25A I(C), 400V V(BR)CES, N-Channel, I2PAK-3 | Fairchild Semiconductor Corporation | GT20G101 vs SGI25N40 |
| SGI25N40 | Insulated Gate Bipolar Transistor, 25A I(C), 400V V(BR)CES, N-Channel, I2PAK-3 | Samsung Semiconductor | GT20G101 vs SGI25N40 |
| CT30VM-8 | 400V, N-CHANNEL IGBT, TO-220C, 3 PIN | Renesas Electronics Corporation | GT20G101 vs CT30VM-8 |
| GT25G101 | TRANSISTOR 25 A, 400 V, N-CHANNEL IGBT, 2-10S1C, 3 PIN, Insulated Gate BIP Transistor | Toshiba America Electronic Components | GT20G101 vs GT25G101 |