Part Details for GT20D101 by Toshiba America Electronic Components
Overview of GT20D101 by Toshiba America Electronic Components
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Part Details for GT20D101
GT20D101 CAD Models
GT20D101 Part Data Attributes:
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GT20D101
Toshiba America Electronic Components
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GT20D101
Toshiba America Electronic Components
TRANSISTOR 20 A, 250 V, N-CHANNEL IGBT, TO-3P, TO-3P, 3 PIN, Insulated Gate BIP Transistor
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Rohs Code | No | |
Part Life Cycle Code | Obsolete | |
Ihs Manufacturer | TOSHIBA CORP | |
Package Description | 2-21F1C, 3 PIN | |
Pin Count | 3 | |
Reach Compliance Code | unknown | |
Samacsys Manufacturer | Toshiba | |
Case Connection | COLLECTOR | |
Collector Current-Max (IC) | 20 A | |
Collector-Emitter Voltage-Max | 250 V | |
Configuration | SINGLE | |
Gate-Emitter Thr Voltage-Max | 3.2 V | |
Gate-Emitter Voltage-Max | 20 V | |
JESD-30 Code | R-PSFM-T3 | |
Number of Elements | 1 | |
Number of Terminals | 3 | |
Operating Temperature-Max | 150 °C | |
Package Body Material | PLASTIC/EPOXY | |
Package Shape | RECTANGULAR | |
Package Style | FLANGE MOUNT | |
Peak Reflow Temperature (Cel) | NOT SPECIFIED | |
Polarity/Channel Type | N-CHANNEL | |
Power Dissipation Ambient-Max | 180 W | |
Qualification Status | Not Qualified | |
Surface Mount | NO | |
Terminal Form | THROUGH-HOLE | |
Terminal Position | SINGLE | |
Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED | |
Transistor Application | POWER AMPLIFIER | |
Transistor Element Material | SILICON | |
VCEsat-Max | 3 V |