Part Details for GT15J101 by Toshiba America Electronic Components
Results Overview of GT15J101 by Toshiba America Electronic Components
- Distributor Offerings: (0 listings)
- Number of FFF Equivalents: (0 replacements)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (10 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
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GT15J101 Information
GT15J101 by Toshiba America Electronic Components is an IGBT.
IGBTs are under the broader part category of Transistors.
A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.
Part Details for GT15J101
GT15J101 CAD Models
GT15J101 Part Data Attributes
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GT15J101
Toshiba America Electronic Components
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Datasheet
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GT15J101
Toshiba America Electronic Components
TRANSISTOR 15 A, 600 V, N-CHANNEL IGBT, TO-3PN, TO-3PN, 3 PIN, Insulated Gate BIP Transistor
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| Rohs Code | No | |
| Part Life Cycle Code | Obsolete | |
| Ihs Manufacturer | TOSHIBA CORP | |
| Package Description | FLANGE MOUNT, R-PSFM-T3 | |
| Pin Count | 3 | |
| Reach Compliance Code | unknown | |
| ECCN Code | EAR99 | |
| HTS Code | 8541.29.00.95 | |
| Additional Feature | HIGH SPEED | |
| Case Connection | COLLECTOR | |
| Collector Current-Max (IC) | 15 A | |
| Collector-Emitter Voltage-Max | 600 V | |
| Configuration | SINGLE | |
| Fall Time-Max (tf) | 350 ns | |
| Gate-Emitter Thr Voltage-Max | 6 V | |
| Gate-Emitter Voltage-Max | 20 V | |
| JESD-30 Code | R-PSFM-T3 | |
| JESD-609 Code | e0 | |
| Number of Elements | 1 | |
| Number of Terminals | 3 | |
| Operating Temperature-Max | 150 °C | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | RECTANGULAR | |
| Package Style | FLANGE MOUNT | |
| Polarity/Channel Type | N-CHANNEL | |
| Power Dissipation Ambient-Max | 100 W | |
| Power Dissipation-Max (Abs) | 100 W | |
| Qualification Status | Not Qualified | |
| Rise Time-Max (tr) | 600 ns | |
| Surface Mount | NO | |
| Terminal Finish | Tin/Lead (Sn/Pb) | |
| Terminal Form | THROUGH-HOLE | |
| Terminal Position | SINGLE | |
| Transistor Application | MOTOR CONTROL | |
| Transistor Element Material | SILICON | |
| Turn-off Time-Nom (toff) | 500 ns | |
| Turn-on Time-Nom (ton) | 400 ns | |
| VCEsat-Max | 4 V |
Alternate Parts for GT15J101
This table gives cross-reference parts and alternative options found for GT15J101. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of GT15J101, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
| Part Number | Manufacturer | Composite Price | Description | Compare |
|---|---|---|---|---|
| IRGBC30FD2 | International Rectifier | Check for Price | Insulated Gate Bipolar Transistor, 31A I(C), 600V V(BR)CES, N-Channel, TO-220AB, TO-220AB, 3 PIN | GT15J101 vs IRGBC30FD2 |
| GT15H101 | Toshiba America Electronic Components | Check for Price | TRANSISTOR 15 A, 500 V, N-CHANNEL IGBT, 2-16C1C, 3 PIN, Insulated Gate BIP Transistor | GT15J101 vs GT15H101 |
| HGT1S3N60B3DS | Fairchild Semiconductor Corporation | Check for Price | Insulated Gate Bipolar Transistor, 7A I(C), 600V V(BR)CES, N-Channel, TO-263AB, | GT15J101 vs HGT1S3N60B3DS |
| IRG4PC30KD | Infineon Technologies AG | Check for Price | Insulated Gate Bipolar Transistor, 28A I(C), 600V V(BR)CES, N-Channel, TO-247AC, TO-3P, 3 PIN | GT15J101 vs IRG4PC30KD |
| IRG4PC50U | Infineon Technologies AG | Check for Price | Insulated Gate Bipolar Transistor, 55A I(C), 600V V(BR)CES, N-Channel, TO-247AC, TO-3P, 3 PIN | GT15J101 vs IRG4PC50U |
| IXSH35N100A | IXYS Corporation | Check for Price | Insulated Gate Bipolar Transistor, 70A I(C), 1000V V(BR)CES, N-Channel, TO-247AD, TO-247AD, 3 PIN | GT15J101 vs IXSH35N100A |
| GT20J311 | Toshiba America Electronic Components | Check for Price | TRANSISTOR 20 A, 600 V, N-CHANNEL IGBT, 2-16H1A, 3 PIN, Insulated Gate BIP Transistor | GT15J101 vs GT20J311 |
| IXSH15N120B | IXYS Corporation | Check for Price | Insulated Gate Bipolar Transistor, 30A I(C), 1200V V(BR)CES, N-Channel, TO-247AD, TO-247AD, 3 PIN | GT15J101 vs IXSH15N120B |
| IRG4PC30WPBF | Infineon Technologies AG | Check for Price | Insulated Gate Bipolar Transistor, 23A I(C), 600V V(BR)CES, N-Channel, TO-247AC, TO-247AC, 3 PIN | GT15J101 vs IRG4PC30WPBF |
| IRG4PC40S | Infineon Technologies AG | Check for Price | Insulated Gate Bipolar Transistor, 60A I(C), 600V V(BR)CES, N-Channel, TO-247AC, TO-3P, 3 PIN | GT15J101 vs IRG4PC40S |