There are no models available for this part yet.
Overview of GS8182S08BGD-250T by GSI Technology
Note: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
- Distributor Offerings: ( 0 listings )
- Number of FFF Equivalents: ( 10 replacements )
- CAD Models: ( Request Part )
- Number of Functional Equivalents: ( 10 options )
- Part Data Attributes ( Available )
- Reference Designs: ( Not Available )
Where used in Applications:
Internet of Things (IoT)
Environmental Monitoring
Financial Technology (Fintech)
Smart Cities
Transportation and Logistics
Agriculture Technology
Telecommunications
Virtual Reality (VR), Augmented Reality (AR), and Vision Systems
Education and Research
Consumer Electronics
Security and Surveillance
Audio and Video Systems
Computing and Data Storage
Healthcare
Entertainment and Gaming
Available Datasheets
Part # | Manufacturer | Description | Datasheet |
---|---|---|---|
2SJ625(0)-T1B-AT | Renesas Electronics Corporation | Power MOSFETs for Automotive | |
X9250TS24Z-2.7T1 | Renesas Electronics Corporation | Quad Digitally Controlled Potentiometer (XDCP™) |
CAD Models for GS8182S08BGD-250T by GSI Technology
Part Data Attributes for GS8182S08BGD-250T by GSI Technology
|
|
---|---|
Pbfree Code
|
Yes
|
Rohs Code
|
Yes
|
Part Life Cycle Code
|
End Of Life
|
Ihs Manufacturer
|
GSI TECHNOLOGY
|
Part Package Code
|
BGA
|
Package Description
|
LBGA,
|
Pin Count
|
165
|
Reach Compliance Code
|
compliant
|
ECCN Code
|
3A991.B.2.A
|
HTS Code
|
8542.32.00.41
|
Access Time-Max
|
0.45 ns
|
Additional Feature
|
PIPELINED ARCHITECTURE
|
JESD-30 Code
|
R-PBGA-B165
|
JESD-609 Code
|
e1
|
Length
|
15 mm
|
Memory Density
|
16777216 bit
|
Memory IC Type
|
DDR SRAM
|
Memory Width
|
8
|
Moisture Sensitivity Level
|
3
|
Number of Functions
|
1
|
Number of Terminals
|
165
|
Number of Words
|
2097152 words
|
Number of Words Code
|
2000000
|
Operating Mode
|
SYNCHRONOUS
|
Operating Temperature-Max
|
70 °C
|
Operating Temperature-Min
|
|
Organization
|
2MX8
|
Package Body Material
|
PLASTIC/EPOXY
|
Package Code
|
LBGA
|
Package Shape
|
RECTANGULAR
|
Package Style
|
GRID ARRAY, LOW PROFILE
|
Parallel/Serial
|
PARALLEL
|
Peak Reflow Temperature (Cel)
|
260
|
Qualification Status
|
Not Qualified
|
Seated Height-Max
|
1.4 mm
|
Supply Voltage-Max (Vsup)
|
1.9 V
|
Supply Voltage-Min (Vsup)
|
1.7 V
|
Supply Voltage-Nom (Vsup)
|
1.8 V
|
Surface Mount
|
YES
|
Technology
|
CMOS
|
Temperature Grade
|
COMMERCIAL
|
Terminal Finish
|
TIN SILVER COPPER
|
Terminal Form
|
BALL
|
Terminal Pitch
|
1 mm
|
Terminal Position
|
BOTTOM
|
Width
|
13 mm
|
Alternate Parts for GS8182S08BGD-250T
This table gives cross-reference parts and alternative options found for GS8182S08BGD-250T. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of GS8182S08BGD-250T, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
Part Number | Description | Manufacturer | Compare |
---|---|---|---|
GS8182S08BD-250T | DDR SRAM, 2MX8, 0.45ns, CMOS, PBGA165, 13 X 15 MM, 1 MM PITCH, FPBGA-165 | GSI Technology | GS8182S08BGD-250T vs GS8182S08BD-250T |
GS8182S08BD-250 | DDR SRAM, 2MX8, 0.45ns, CMOS, PBGA165, 13 X 15 MM, 1 MM PITCH, FPBGA-165 | GSI Technology | GS8182S08BGD-250T vs GS8182S08BD-250 |
GS8182S08BD-250IT | DDR SRAM, 2MX8, 0.45ns, CMOS, PBGA165, 13 X 15 MM, 1 MM PITCH, FPBGA-165 | GSI Technology | GS8182S08BGD-250T vs GS8182S08BD-250IT |
GS8182S08BGD-250 | DDR SRAM, 2MX8, 0.45ns, CMOS, PBGA165, 13 X 15 MM, 1 MM PITCH, ROHS COMPLIANT, FPBGA-165 | GSI Technology | GS8182S08BGD-250T vs GS8182S08BGD-250 |
GS8182S08BGD-250I | DDR SRAM, 2MX8, 0.45ns, CMOS, PBGA165, 13 X 15 MM, 1 MM PITCH, ROHS COMPLIANT, FPBGA-165 | GSI Technology | GS8182S08BGD-250T vs GS8182S08BGD-250I |
CY7C1392BV18-250BZC | DDR SRAM, 2MX8, 0.45ns, CMOS, PBGA165, 13 X 15 MM, 1.40 MM HEIGHT, MO-216, FBGA-165 | Cypress Semiconductor | GS8182S08BGD-250T vs CY7C1392BV18-250BZC |
CY7C1392BV18-250BZXC | DDR SRAM, 2MX8, 0.45ns, CMOS, PBGA165, 13 X 15 MM, 1.40 MM HEIGHT, LEAD FREE, MO-216, FBGA-165 | Cypress Semiconductor | GS8182S08BGD-250T vs CY7C1392BV18-250BZXC |
GS8182S08BD-250I | DDR SRAM, 2MX8, 0.45ns, CMOS, PBGA165, 13 X 15 MM, 1 MM PITCH, FPBGA-165 | GSI Technology | GS8182S08BGD-250T vs GS8182S08BD-250I |
CY7C1392BV18-250BZI | DDR SRAM, 2MX8, 0.45ns, CMOS, PBGA165, 13 X 15 MM, 1.40 MM HEIGHT, MO-216, FBGA-165 | Cypress Semiconductor | GS8182S08BGD-250T vs CY7C1392BV18-250BZI |
GS8182S08GBD-250I | DDR SRAM, 2MX8, 0.45ns, CMOS, PBGA165, 13 X 15 MM, 1 MM PITCH, ROHS COMPLIANT, MO-216CAB-1, FPBGA-165 | GSI Technology | GS8182S08BGD-250T vs GS8182S08GBD-250I |