Datasheets
GP800DDS18 by:

Insulated Gate Bipolar Transistor, 800A I(C), 1800V V(BR)CES, N-Channel

Part Details for GP800DDS18 by Dynex Semiconductor

Overview of GP800DDS18 by Dynex Semiconductor

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Applications Energy and Power Systems Transportation and Logistics Renewable Energy Automotive

Part Details for GP800DDS18

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GP800DDS18 Part Data Attributes

GP800DDS18 Dynex Semiconductor
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GP800DDS18 Dynex Semiconductor Insulated Gate Bipolar Transistor, 800A I(C), 1800V V(BR)CES, N-Channel
Part Life Cycle Code Obsolete
Ihs Manufacturer DYNEX SEMICONDUCTOR LTD
Package Description FLANGE MOUNT, R-XUFM-X12
Reach Compliance Code unknown
ECCN Code EAR99
Case Connection ISOLATED
Collector Current-Max (IC) 800 A
Collector-Emitter Voltage-Max 1800 V
Configuration SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE
JESD-30 Code R-XUFM-X12
Number of Elements 2
Number of Terminals 12
Package Body Material UNSPECIFIED
Package Shape RECTANGULAR
Package Style FLANGE MOUNT
Polarity/Channel Type N-CHANNEL
Qualification Status Not Qualified
Surface Mount NO
Terminal Form UNSPECIFIED
Terminal Position UPPER
Transistor Application MOTOR CONTROL
Transistor Element Material SILICON
Turn-off Time-Nom (toff) 1450 ns
Turn-on Time-Nom (ton) 650 ns

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