Part Details for GP350MHB06S by Dynex Semiconductor
Overview of GP350MHB06S by Dynex Semiconductor
- Distributor Offerings: (0 listings)
- Number of FFF Equivalents: (0 crosses)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (10 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Applications
Consumer Electronics
Environmental Monitoring
Internet of Things (IoT)
Smart Cities
Agriculture Technology
Telecommunications
Part Details for GP350MHB06S
GP350MHB06S CAD Models
GP350MHB06S Part Data Attributes:
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GP350MHB06S
Dynex Semiconductor
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Datasheet
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GP350MHB06S
Dynex Semiconductor
Insulated Gate Bipolar Transistor, 500A I(C), 600V V(BR)CES, N-Channel,
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| Pbfree Code | Yes | |
| Rohs Code | Yes | |
| Part Life Cycle Code | Contact Manufacturer | |
| Ihs Manufacturer | DYNEX SEMICONDUCTOR LTD | |
| Package Description | FLANGE MOUNT, R-XUFM-X11 | |
| Reach Compliance Code | unknown | |
| ECCN Code | EAR99 | |
| Case Connection | ISOLATED | |
| Collector Current-Max (IC) | 500 A | |
| Collector-Emitter Voltage-Max | 600 V | |
| Configuration | SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE | |
| JESD-30 Code | R-XUFM-X11 | |
| Number of Elements | 2 | |
| Number of Terminals | 11 | |
| Package Body Material | UNSPECIFIED | |
| Package Shape | RECTANGULAR | |
| Package Style | FLANGE MOUNT | |
| Peak Reflow Temperature (Cel) | NOT SPECIFIED | |
| Polarity/Channel Type | N-CHANNEL | |
| Qualification Status | Not Qualified | |
| Surface Mount | NO | |
| Terminal Form | UNSPECIFIED | |
| Terminal Position | UPPER | |
| Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED | |
| Transistor Application | MOTOR CONTROL | |
| Transistor Element Material | SILICON | |
| Turn-off Time-Nom (toff) | 1400 ns | |
| Turn-on Time-Nom (ton) | 630 ns |
Alternate Parts for GP350MHB06S
This table gives cross-reference parts and alternative options found for GP350MHB06S. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of GP350MHB06S, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
| Part Number | Description | Manufacturer | Compare |
|---|---|---|---|
| MG400H1US1 | TRANSISTOR 400 A, 500 V, N-CHANNEL IGBT, 2-109A4A, 4 PIN, Insulated Gate BIP Transistor | Toshiba America Electronic Components | GP350MHB06S vs MG400H1US1 |
| CM300DY-12H | Insulated Gate Bipolar Transistor, 300A I(C), 600V V(BR)CES, N-Channel, | Powerex Power Semiconductors | GP350MHB06S vs CM300DY-12H |
| MG100J2YS9 | TRANSISTOR 100 A, 600 V, N-CHANNEL IGBT, Insulated Gate BIP Transistor | Toshiba America Electronic Components | GP350MHB06S vs MG100J2YS9 |
| APTGT300A60TG | Insulated Gate Bipolar Transistor, 430A I(C), 600V V(BR)CES, N-Channel | Microchip Technology Inc | GP350MHB06S vs APTGT300A60TG |
| 2MBI300L-060 | Insulated Gate Bipolar Transistor, 300A I(C), 600V V(BR)CES, N-Channel, M217, 7 PIN | Fuji Electric Co Ltd | GP350MHB06S vs 2MBI300L-060 |
| CM300DY-24T | Insulated Gate Bipolar Transistor, | Mitsubishi Electric | GP350MHB06S vs CM300DY-24T |
| 1MBI400F-060 | Insulated Gate Bipolar Transistor, 400A I(C), 600V V(BR)CES, N-Channel, M116, 4 PIN | Fuji Electric Co Ltd | GP350MHB06S vs 1MBI400F-060 |
| CM600HA-12H | Insulated Gate Bipolar Transistor, 600A I(C), 600V V(BR)CES, N-Channel, | Mitsubishi Electric | GP350MHB06S vs CM600HA-12H |
| CM150DU-12H | Insulated Gate Bipolar Transistor, 150A I(C), 600V V(BR)CES, N-Channel, | Mitsubishi Electric | GP350MHB06S vs CM150DU-12H |
| MG400J2YS50 | TRANSISTOR 400 A, 600 V, N-CHANNEL IGBT, 2-109D1A, 8 PIN, Insulated Gate BIP Transistor | Toshiba America Electronic Components | GP350MHB06S vs MG400J2YS50 |