Datasheets
GP201MHS18 by: Dynex Semiconductor

Insulated Gate Bipolar Transistor, 200A I(C), 1800V V(BR)CES, N-Channel,

Part Details for GP201MHS18 by Dynex Semiconductor

Results Overview of GP201MHS18 by Dynex Semiconductor

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Applications Automotive

GP201MHS18 Information

GP201MHS18 by Dynex Semiconductor is an IGBT.
IGBTs are under the broader part category of Transistors.

A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.

Part Details for GP201MHS18

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GP201MHS18 Part Data Attributes

GP201MHS18 Dynex Semiconductor
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GP201MHS18 Dynex Semiconductor Insulated Gate Bipolar Transistor, 200A I(C), 1800V V(BR)CES, N-Channel,
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Part Life Cycle Code Obsolete
Ihs Manufacturer DYNEX SEMICONDUCTOR LTD
Package Description FLANGE MOUNT, R-XUFM-X11
Reach Compliance Code unknown
ECCN Code EAR99
Additional Feature HIGH RELIABILITY
Case Connection ISOLATED
Collector Current-Max (IC) 200 A
Collector-Emitter Voltage-Max 1800 V
Configuration SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE
JESD-30 Code R-XUFM-X11
Number of Elements 2
Number of Terminals 11
Package Body Material UNSPECIFIED
Package Shape RECTANGULAR
Package Style FLANGE MOUNT
Polarity/Channel Type N-CHANNEL
Qualification Status Not Qualified
Surface Mount NO
Terminal Form UNSPECIFIED
Terminal Position UPPER
Transistor Application MOTOR CONTROL
Transistor Element Material SILICON
Turn-off Time-Nom (toff) 950 ns
Turn-on Time-Nom (ton) 640 ns