Datasheets
GC08MPS12-252 by:
GeneSic Semiconductor Inc
GeneSic Semiconductor Inc
Navitas Semiconductor
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Silicon Carbide (SiC) Merged PiN Schottky (MPS) Diode 1200V 8A TO-252-2; Mounting Style: Surface Mount; Package / Case: TO-252-2; Packaging: Tape & Reel; Factory Pack Quantity: 2500; Configuration: Single; Repetitive Reverse Voltagen(VRRM): 1200 V; Forward Currentn(IF): 8 A; Forward Voltagen(VF): 1.5 V @ 8 A; Reverse Currentn(IR): 0.7 uA @ 1200 V; Total Capacitive Charge (QC): 33 nC; Capacitancen(C): 545 pF @ 1 V; Reverse Recovery Timen(trr): < 10 ns; Forward Surge Currentn(IFSM): 65 A; Power Dissipationn(PD): 272 W; Switching Speedn(ts): < 10 ns; Minimum Operating Temperature: - 55 °C; Maximum Operating Temperature: 175 °C

Part Details for GC08MPS12-252 by GeneSic Semiconductor Inc

Results Overview of GC08MPS12-252 by GeneSic Semiconductor Inc

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GC08MPS12-252 Information

GC08MPS12-252 by GeneSic Semiconductor Inc is a Rectifier Diode.
Rectifier Diodes are under the broader part category of Diodes.

A diode is a electrical part that can control the direction in which the current flows in a device. Consider factors like voltage drop, current capacity, reverse voltage, and operating frequency when selecting a diode. Read more about Diodes on our Diodes part category page.

Price & Stock for GC08MPS12-252

Part # Distributor Description Stock Price Buy
DISTI # 94AC2962
Newark Silicon Carbide Schottky Diode, To-252, Product Range:Mps Series, Diode Configuration:Single, Rep... etitive Peak Reverse Voltage:1.2Kv, Average Forward Current:40A, Total Capacitive Charge:33Nc, Diode Case Style:To-252 (Dpak) Rohs Compliant: Yes |Genesic Semiconductor GC08MPS12-252 more RoHS: Compliant Min Qty: 2500 Package Multiple: 1 Date Code: 0 Container: Cut Tape 0
  • 1,000 $2.9200
$2.9200 Buy Now
NAC Silicon Carbide (SiC) Merged PiN Schottky (MPS)Diode 1200V 8A TO-252-2 RoHS: Compliant Min Qty: 2500 Package Multiple: 2500 0
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Part Details for GC08MPS12-252

GC08MPS12-252 CAD Models

GC08MPS12-252 Part Data Attributes

GC08MPS12-252 GeneSic Semiconductor Inc
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GC08MPS12-252 GeneSic Semiconductor Inc Silicon Carbide (SiC) Merged PiN Schottky (MPS) Diode 1200V 8A TO-252-2; Mounting Style: Surface Mount; Package / Case: TO-252-2; Packaging: Tape & Reel; Factory Pack Quantity: 2500; Configuration: Single; Repetitive Reverse Voltagen(VRRM): 1200 V; Forward Currentn(IF): 8 A; Forward Voltagen(VF): 1.5 V @ 8 A; Reverse Currentn(IR): 0.7 uA @ 1200 V; Total Capacitive Charge (QC): 33 nC; Capacitancen(C): 545 pF @ 1 V; Reverse Recovery Timen(trr): < 10 ns; Forward Surge Currentn(IFSM): 65 A; Power Dissipationn(PD): 272 W; Switching Speedn(ts): < 10 ns; Minimum Operating Temperature: - 55 °C; Maximum Operating Temperature: 175 °C
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Pbfree Code Yes
Rohs Code Yes
Part Life Cycle Code Not Recommended
Ihs Manufacturer GENESIC SEMICONDUCTOR INC
Part Package Code TO-252-2
Reach Compliance Code unknown
Samacsys Manufacturer GeneSiC Semiconductor
Additional Feature FREE WHEELING DIODE, PD-CASE
Application EFFICIENCY
Case Connection CATHODE
Configuration SINGLE
Diode Element Material SILICON CARBIDE
Diode Type RECTIFIER DIODE
Forward Voltage-Max (VF) 1.8 V
JEDEC-95 Code TO-252
JESD-30 Code R-PSSO-G2
Non-rep Pk Forward Current-Max 75 A
Number of Elements 1
Number of Phases 1
Number of Terminals 2
Operating Temperature-Max 175 °C
Operating Temperature-Min -55 °C
Output Current-Max 25 A
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style SMALL OUTLINE
Power Dissipation-Max 219 W
Rep Pk Reverse Voltage-Max 1200 V
Reverse Current-Max 5 µA
Reverse Test Voltage 1200 V
Surface Mount YES
Technology SCHOTTKY
Terminal Form GULL WING
Terminal Position SINGLE

GC08MPS12-252 Frequently Asked Questions (FAQ)

  • GeneSiC recommends a 2-layer or 4-layer PCB with a thermal pad connected to a heat sink or a thermal interface material (TIM) to ensure efficient heat dissipation. A minimum of 2 oz copper thickness is recommended for the PCB. Additionally, a thermal via array under the device can help to reduce thermal resistance.

  • To ensure reliable operation in high-temperature environments, it's essential to follow the recommended derating curves for the device. GeneSiC recommends reducing the voltage and current ratings as the temperature increases. Additionally, ensuring good thermal management and using a suitable heat sink or cooling system can help to maintain a safe operating temperature.

  • GeneSiC recommends using a gate driver with a high current capability (e.g., > 1A) and a low output impedance to ensure fast switching times. The gate drive circuit should be placed close to the device, and the layout should minimize parasitic inductance and capacitance. A low-impedance gate resistor (e.g., < 10 ohms) can help to reduce ringing and oscillations.

  • GeneSiC recommends using a suitable overvoltage protection (OVP) circuit, such as a zener diode or a dedicated OVP IC, to prevent voltage spikes from damaging the device. Additionally, a current sense resistor and a suitable overcurrent protection (OCP) circuit can help to detect and respond to overcurrent conditions. A fuse or a circuit breaker can also be used to disconnect the power supply in case of a fault.

  • GeneSiC recommends performing thorough testing and validation procedures, including electrical characterization, thermal testing, and environmental testing (e.g., temperature cycling, humidity testing). The device should be tested under various operating conditions, including different voltage and current levels, to ensure it meets the required specifications.