Datasheets
GBJ808-F by: Diodes Incorporated

Bridge Rectifier Diode, 1 Phase, 8A, 800V V(RRM), Silicon, ROHS COMPLIANT, PLASTIC, GBJ, 4 PIN

Part Details for GBJ808-F by Diodes Incorporated

Results Overview of GBJ808-F by Diodes Incorporated

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GBJ808-F Information

GBJ808-F by Diodes Incorporated is a Bridge Rectifier Diode.
Bridge Rectifier Diodes are under the broader part category of Diodes.

A diode is a electrical part that can control the direction in which the current flows in a device. Consider factors like voltage drop, current capacity, reverse voltage, and operating frequency when selecting a diode. Read more about Diodes on our Diodes part category page.

Available Datasheets

Part # Manufacturer Description Datasheet
LM2917MX/NOPB Texas Instruments Frequency to Voltage Converter 14-SOIC -40 to 85
LM2907MX/NOPB Texas Instruments Frequency to Voltage Converter 14-SOIC -40 to 85
LM2917M/NOPB Texas Instruments Frequency to Voltage Converter 14-SOIC -40 to 85

Price & Stock for GBJ808-F

Part # Distributor Description Stock Price Buy
DISTI # GBJ808-FDI-ND
DigiKey BRIDGE RECT 1PHASE 800V 8A GBJ Min Qty: 15 Lead time: 16 Weeks Container: Tube Temporarily Out of Stock
  • 15 $1.5660
$1.5660 Buy Now
DISTI # GBJ808-F
Avnet Americas Diode Rectifier Bridge Single 800V 8A 4-Pin(4+Tab) GBJ Tube - Rail/Tube (Alt: GBJ808-F) RoHS: Compliant Min Qty: 15 Package Multiple: 15 Lead time: 16 Weeks, 0 Days Container: Tube 0
  • 15 $0.9114
  • 30 $0.9067
  • 60 $0.9021
  • 90 $0.8974
  • 120 $0.8400
$0.8400 / $0.9114 Buy Now
DISTI # 621-GBJ808-F
Mouser Electronics Bridge Rectifiers 8.0A 800V RoHS: Compliant 0
  • 1 $1.6200
  • 10 $1.2800
  • 105 $1.2500
$1.2500 / $1.6200 Order Now
Future Electronics Bridge Rectifiers 8.0A 800V RoHS: Compliant pbFree: Yes Min Qty: 150 Package Multiple: 15 Lead time: 16 Weeks Container: Tube 0
Tube
  • 1 $0.9300
  • 30 $0.9050
  • 125 $0.8800
  • 300 $0.8600
  • 1,250 $0.8150
$0.8150 / $0.9300 Buy Now
Future Electronics Bridge Rectifiers 8.0A 800V RoHS: Compliant pbFree: Yes Min Qty: 150 Package Multiple: 15 Lead time: 16 Weeks Container: Tube 0
Tube
  • 15 $0.8750
  • 300 $0.8600
  • 600 $0.8500
  • 750 $0.8450
  • 2,250 $0.8150
$0.8150 / $0.8750 Buy Now
DISTI # GBJ808-F
TME Bridge rectifier: single-phase Min Qty: 1 0
  • 1 $1.4100
  • 5 $1.2800
  • 15 $1.2100
  • 90 $1.1100
  • 300 $1.0100
  • 600 $0.9400
  • 1,200 $0.9000
  • 2,400 $0.8400
$0.8400 / $1.4100 RFQ
DISTI # GBJ808-F
Avnet Silica Diode Rectifier Bridge Single 800V 8A 4Pin4Tab GBJ Tube (Alt: GBJ808-F) RoHS: Compliant Min Qty: 15 Package Multiple: 15 Silica - 0
Buy Now

Part Details for GBJ808-F

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GBJ808-F Part Data Attributes

GBJ808-F Diodes Incorporated
Buy Now Datasheet
Compare Parts:
GBJ808-F Diodes Incorporated Bridge Rectifier Diode, 1 Phase, 8A, 800V V(RRM), Silicon, ROHS COMPLIANT, PLASTIC, GBJ, 4 PIN
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Pbfree Code No
Rohs Code Yes
Part Life Cycle Code Obsolete
Ihs Manufacturer DIODES INC
Package Description GBJ, 4 PIN
Pin Count 4
Reach Compliance Code not_compliant
ECCN Code EAR99
HTS Code 8541.10.00.80
Factory Lead Time 16 Weeks
Samacsys Manufacturer Diodes Incorporated
Breakdown Voltage-Min 800 V
Case Connection ISOLATED
Configuration BRIDGE, 4 ELEMENTS
Diode Element Material SILICON
Diode Type BRIDGE RECTIFIER DIODE
Forward Voltage-Max (VF) 1 V
JESD-30 Code R-PSFM-T4
JESD-609 Code e3
Moisture Sensitivity Level 1
Non-rep Pk Forward Current-Max 170 A
Number of Elements 4
Number of Phases 1
Number of Terminals 4
Operating Temperature-Max 150 °C
Operating Temperature-Min -65 °C
Output Current-Max 8 A
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style FLANGE MOUNT
Peak Reflow Temperature (Cel) 260
Qualification Status Not Qualified
Reference Standard UL RECOGNIZED
Rep Pk Reverse Voltage-Max 800 V
Surface Mount NO
Terminal Finish MATTE TIN
Terminal Form THROUGH-HOLE
Terminal Position SINGLE

Alternate Parts for GBJ808-F

This table gives cross-reference parts and alternative options found for GBJ808-F. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of GBJ808-F, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.

Part Number Manufacturer Composite Price Description Compare
GBU8K onsemi $0.9473 8 A Bridge Rectifier, SIP-4, 800-TUBE GBJ808-F vs GBU8K
GBU8K-M3/51 Vishay Intertechnologies $1.8784 Bridge Rectifier Diode, GBJ808-F vs GBU8K-M3/51
GBU8K-M3/45 Vishay Intertechnologies $1.6574 Bridge Rectifier Diode, GBJ808-F vs GBU8K-M3/45
GBU8K-E3/51 Vishay Intertechnologies $1.5403 Bridge Rectifier Diode, 1 Phase, 3.9A, 800V V(RRM), Silicon, ROHS COMPLIANT, PLASTIC, CASE GBU, 4 PIN GBJ808-F vs GBU8K-E3/51
GBU8K-E3/45 Vishay Intertechnologies $1.4552 Bridge Rectifier Diode, 1 Phase, 3.9A, 800V V(RRM), Silicon, ROHS COMPLIANT, PLASTIC, CASE GBU, 4 PIN GBJ808-F vs GBU8K-E3/45

GBJ808-F Related Parts

GBJ808-F Frequently Asked Questions (FAQ)

  • A good PCB layout for the GBJ808-F should ensure minimal lead inductance, use a solid ground plane, and keep the input and output traces separate to minimize noise coupling. A 4-layer PCB with a dedicated power plane and a solid ground plane is recommended.

  • The GBJ808-F has a thermal pad on the bottom of the package. Ensure good thermal contact between the thermal pad and the PCB by using a thermal interface material (TIM) such as thermal tape or thermal grease. A copper heat sink or a metal core PCB can also be used to improve heat dissipation.

  • The GBJ808-F can withstand voltage transients up to 100V for a duration of 100ns, as per the datasheet. However, it's recommended to use a TVS diode or a voltage clamp to protect the device from voltage transients exceeding 80V to ensure reliable operation.

  • Yes, the GBJ808-F is suitable for high-frequency switching applications up to 100kHz. However, ensure that the PCB layout is optimized for high-frequency operation, and the device is properly bypassed with ceramic capacitors to minimize ringing and oscillations.

  • The input capacitor should be selected based on the input voltage, frequency, and ripple current requirements. A low-ESR ceramic capacitor with a value between 1uF to 10uF is recommended. The capacitor should be placed close to the input pins of the GBJ808-F to minimize inductance and ensure good decoupling.