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GB50RF60K by:

Insulated Gate Bipolar Transistor, 80A I(C), 600V V(BR)CES, N-Channel, LEAD FREE, ECONO2PIM-24

Part Details for GB50RF60K by Vishay Intertechnologies

Overview of GB50RF60K by Vishay Intertechnologies

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Applications Space Technology Aerospace and Defense Energy and Power Systems Renewable Energy

Price & Stock for GB50RF60K

Part # Distributor Description Stock Price Buy
DISTI # GB50RF60K
Avnet Americas Trans IGBT Module N-CH 600V 80A 24-Pin ECONO2 PIM - Bulk (Alt: GB50RF60K) RoHS: Compliant Min Qty: 6 Package Multiple: 6 Container: Bulk 0
RFQ

Part Details for GB50RF60K

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GB50RF60K Part Data Attributes

GB50RF60K Vishay Intertechnologies
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GB50RF60K Vishay Intertechnologies Insulated Gate Bipolar Transistor, 80A I(C), 600V V(BR)CES, N-Channel, LEAD FREE, ECONO2PIM-24
Rohs Code Yes
Part Life Cycle Code Obsolete
Ihs Manufacturer VISHAY INTERTECHNOLOGY INC
Package Description LEAD FREE, ECONO2PIM-24
Pin Count 24
Reach Compliance Code unknown
ECCN Code EAR99
Case Connection ISOLATED
Collector Current-Max (IC) 80 A
Collector-Emitter Voltage-Max 600 V
Configuration COMPLEX
Gate-Emitter Voltage-Max 20 V
JESD-30 Code R-XUFM-X24
JESD-609 Code e3
Number of Elements 7
Number of Terminals 24
Operating Temperature-Max 150 °C
Package Body Material UNSPECIFIED
Package Shape RECTANGULAR
Package Style FLANGE MOUNT
Polarity/Channel Type N-CHANNEL
Power Dissipation-Max (Abs) 215 W
Qualification Status Not Qualified
Surface Mount NO
Terminal Finish MATTE TIN OVER NICKEL
Terminal Form UNSPECIFIED
Terminal Position UPPER
Transistor Application MOTOR CONTROL
Transistor Element Material SILICON
Turn-off Time-Nom (toff) 341 ns
Turn-on Time-Nom (ton) 288 ns

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