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Diodes / Rectifier Diodes / GB02SLT12-252
Datasheets
GB02SLT12-252 by:
GeneSic Semiconductor Inc
GeneSic Semiconductor Inc
Navitas Semiconductor
Not Found

Silicon Carbide (SiC) Merged PiN Schottky (MPS) Diode 1200V 2A TO-252-2; Mounting Style: Surface Mount; Package / Case: TO-252-2; Packaging: Tape & Reel; Factory Pack Quantity: 2500; Configuration: Single; Repetitive Reverse Voltagen(VRRM): 1200 V; Forward Currentn(IF): 2 A; Forward Voltagen(VF): 1.5 V @ 2 A; Reverse Currentn(IR): 0.2 uA @ 1200 V; Total Capacitive Charge (QC): 8 nC; Capacitancen(C): 127 pF @ 1 V; Reverse Recovery Timen(trr): < 10 ns; Forward Surge Currentn(IFSM): 18 A; Power Dissipationn(PD): 93 W; Switching Speedn(ts): < 10 ns; Minimum Operating Temperature: - 55 °C; Maximum Operating Temperature: 175 °C

Part Details for GB02SLT12-252 by GeneSic Semiconductor Inc

Results Overview of GB02SLT12-252 by GeneSic Semiconductor Inc

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GB02SLT12-252 Information

GB02SLT12-252 by GeneSic Semiconductor Inc is a Rectifier Diode.
Rectifier Diodes are under the broader part category of Diodes.

A diode is a electrical part that can control the direction in which the current flows in a device. Consider factors like voltage drop, current capacity, reverse voltage, and operating frequency when selecting a diode. Read more about Diodes on our Diodes part category page.

Price & Stock for GB02SLT12-252

Part # Distributor Description Stock Price Buy
DISTI # 06W2380
Newark Sic Schottky Diode, Single, 2A, 1.2Kv, To-252, Product Range:Mps Series, Diode Configuration:Singl... e, Repetitive Peak Reverse Voltage:1.2Kv, Average Forward Current:2A, Total Capacitive Charge:14Nc, Diode Case Style:To-252 (Dpak) Rohs Compliant: Yes |Genesic GB02SLT12-252 more RoHS: Compliant Min Qty: 2500 Package Multiple: 1 Date Code: 0 Container: Bulk 0
  • 2,500 $0.9580
  • 5,000 $0.9410
$0.9410 / $0.9580 Buy Now
NAC Silicon Carbide (SiC) Merged PiN Schottky (MPS)Diode 1200V 2A TO-252-2 RoHS: Compliant Min Qty: 2500 Package Multiple: 2500 0
RFQ
Vyrian Diodes 1260
RFQ

Part Details for GB02SLT12-252

GB02SLT12-252 CAD Models

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GB02SLT12-252 Part Data Attributes

Parametric Data
GB02SLT12-252 GeneSic Semiconductor Inc
Buy Now Datasheet
Compare Parts:
GB02SLT12-252 GeneSic Semiconductor Inc Silicon Carbide (SiC) Merged PiN Schottky (MPS) Diode 1200V 2A TO-252-2; Mounting Style: Surface Mount; Package / Case: TO-252-2; Packaging: Tape & Reel; Factory Pack Quantity: 2500; Configuration: Single; Repetitive Reverse Voltagen(VRRM): 1200 V; Forward Currentn(IF): 2 A; Forward Voltagen(VF): 1.5 V @ 2 A; Reverse Currentn(IR): 0.2 uA @ 1200 V; Total Capacitive Charge (QC): 8 nC; Capacitancen(C): 127 pF @ 1 V; Reverse Recovery Timen(trr): < 10 ns; Forward Surge Currentn(IFSM): 18 A; Power Dissipationn(PD): 93 W; Switching Speedn(ts): < 10 ns; Minimum Operating Temperature: - 55 °C; Maximum Operating Temperature: 175 °C
Select a part to compare:
Pbfree Code Yes
Rohs Code Yes
Part Life Cycle Code Transferred
Ihs Manufacturer GENESIC SEMICONDUCTOR INC
Part Package Code TO-252-2
Reach Compliance Code compliant
ECCN Code EAR99
Samacsys Manufacturer GeneSiC Semiconductor
Application GENERAL PURPOSE
Configuration SINGLE
Diode Type RECTIFIER DIODE
Forward Voltage-Max (VF) 1.8 V
Non-rep Pk Forward Current-Max 18 A
Number of Elements 1
Number of Phases 1
Operating Temperature-Max 175 °C
Output Current-Max 2 A
Rep Pk Reverse Voltage-Max 1200 V
Surface Mount YES
Technology SCHOTTKY

GB02SLT12-252 Related Parts

GB02SLT12-252 Frequently Asked Questions (FAQ)

  • A 2-layer PCB with a solid ground plane on the bottom layer and a thermal relief pattern on the top layer is recommended. The device should be placed near a thermal pad or a heat sink to ensure good heat dissipation.

  • Ensure that the device is operated within the recommended junction temperature range (TJ) of -40°C to 150°C. Implement a thermal management system, such as a heat sink or fan, to maintain a safe operating temperature.

  • Handle the device with ESD-protective equipment and follow proper ESD handling procedures. Store the device in an ESD-protective package or bag to prevent damage during transportation and storage.

  • The GB02SLT12-252 is a commercial-grade device and may not meet the requirements for high-reliability or aerospace applications. Consult with GeneSic Semiconductor Inc for availability of high-reliability or aerospace-grade versions of the device.

  • Follow the recommended soldering profile and assembly procedures outlined in the GeneSic Semiconductor Inc application note or datasheet. Ensure that the device is soldered using a low-temperature soldering process to prevent damage.