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Transistors / IGBTs / FZ800R12KE3
Datasheets
FZ800R12KE3 by:

Insulated Gate Bipolar Transistor, 1200A I(C), 1200V V(BR)CES, N-Channel, MODULE-5

Part Details for FZ800R12KE3 by Infineon Technologies AG

Overview of FZ800R12KE3 by Infineon Technologies AG

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Part Details for FZ800R12KE3

FZ800R12KE3 Part Data Attributes

Parametric Data
FZ800R12KE3 Infineon Technologies AG
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FZ800R12KE3 Infineon Technologies AG Insulated Gate Bipolar Transistor, 1200A I(C), 1200V V(BR)CES, N-Channel, MODULE-5
Pbfree Code Yes
Rohs Code Yes
Part Life Cycle Code Obsolete
Ihs Manufacturer INFINEON TECHNOLOGIES AG
Part Package Code MODULE
Package Description FLANGE MOUNT, R-XUFM-X4
Pin Count 5
Reach Compliance Code compliant
ECCN Code EAR99
Samacsys Manufacturer Infineon
Case Connection ISOLATED
Collector Current-Max (IC) 1200 A
Collector-Emitter Voltage-Max 1200 V
Configuration SINGLE WITH BUILT-IN DIODE
Gate-Emitter Voltage-Max 20 V
JESD-30 Code R-XUFM-X4
Number of Elements 1
Number of Terminals 4
Operating Temperature-Max 150 °C
Package Body Material UNSPECIFIED
Package Shape RECTANGULAR
Package Style FLANGE MOUNT
Peak Reflow Temperature (Cel) NOT SPECIFIED
Polarity/Channel Type N-CHANNEL
Power Dissipation-Max (Abs) 3550 W
Qualification Status Not Qualified
Surface Mount NO
Terminal Form UNSPECIFIED
Terminal Position UPPER
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Transistor Application POWER CONTROL
Transistor Element Material SILICON
Turn-off Time-Nom (toff) 1000 ns
Turn-on Time-Nom (ton) 440 ns
VCEsat-Max 2.15 V

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