Part Details for FZ750R65KE3 by Infineon Technologies AG
Results Overview of FZ750R65KE3 by Infineon Technologies AG
- Distributor Offerings: (1 listing)
- Number of FFF Equivalents: (0 replacements)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (0 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
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FZ750R65KE3 Information
FZ750R65KE3 by Infineon Technologies AG is an IGBT.
IGBTs are under the broader part category of Transistors.
A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.
Price & Stock for FZ750R65KE3
Part # | Distributor | Description | Stock | Price | Buy | |
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DISTI #
641-FZ750R65KE3
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Mouser Electronics | IGBT Modules IGBT 6500V 750A RoHS: Compliant | 0 |
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$2,431.6500 | Order Now |
Part Details for FZ750R65KE3
FZ750R65KE3 CAD Models
FZ750R65KE3 Part Data Attributes
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FZ750R65KE3
Infineon Technologies AG
Buy Now
Datasheet
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FZ750R65KE3
Infineon Technologies AG
Insulated Gate Bipolar Transistor, 750A I(C), 6500V V(BR)CES, N-Channel, MODULE-9
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Pbfree Code | No | |
Rohs Code | Yes | |
Part Life Cycle Code | Active | |
Ihs Manufacturer | INFINEON TECHNOLOGIES AG | |
Part Package Code | MODULE | |
Pin Count | 9 | |
Reach Compliance Code | compliant | |
ECCN Code | EAR99 | |
Samacsys Manufacturer | Infineon | |
Collector Current-Max (IC) | 750 A | |
Collector-Emitter Voltage-Max | 6500 V | |
Configuration | PARALLEL, 3 ELEMENTS WITH BUILT-IN DIODE | |
Gate-Emitter Voltage-Max | 20 V | |
JESD-30 Code | R-XUFM-X9 | |
Number of Elements | 3 | |
Number of Terminals | 9 | |
Operating Temperature-Max | 150 °C | |
Package Body Material | UNSPECIFIED | |
Package Shape | RECTANGULAR | |
Package Style | FLANGE MOUNT | |
Peak Reflow Temperature (Cel) | NOT SPECIFIED | |
Polarity/Channel Type | N-CHANNEL | |
Power Dissipation-Max (Abs) | 14500 W | |
Qualification Status | Not Qualified | |
Surface Mount | NO | |
Terminal Form | UNSPECIFIED | |
Terminal Position | UPPER | |
Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED | |
Transistor Application | POWER CONTROL | |
Transistor Element Material | SILICON | |
Turn-off Time-Nom (toff) | 8100 ns | |
Turn-on Time-Nom (ton) | 1200 ns | |
VCEsat-Max | 3.4 V |