Datasheets
FZ600R12KE4HOSA1 by:

Insulated Gate Bipolar Transistor, 600A I(C), 1200V V(BR)CES, N-Channel, MODULE-5

Part Details for FZ600R12KE4HOSA1 by Infineon Technologies AG

Overview of FZ600R12KE4HOSA1 by Infineon Technologies AG

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Price & Stock for FZ600R12KE4HOSA1

Part # Distributor Description Stock Price Buy
DISTI # 12AC9643
Newark Igbt, Module, N-Ch, 1.2Kv, 600A, Transistor Polarity:N Channel, Dc Collector Current:600A, Collector Emitter Saturation Voltage Vce(On):1.75V, Power Dissipation Pd:3Kw, Collector Emitter Voltage V(Br)Ceo:1.2Kv, Transistor Case Rohs Compliant: Yes |Infineon FZ600R12KE4HOSA1 Min Qty: 1 Package Multiple: 1 Date Code: 0 Container: Bulk 143
  • 1 $201.0200
$201.0200 Buy Now
DISTI # 448-FZ600R12KE4HOSA1-ND
DigiKey IGBT MOD 1200V 600A 3000W Min Qty: 1 Lead time: 16 Weeks Container: Tray 40
In Stock
  • 1 $135.5900
  • 10 $125.5150
  • 30 $120.9347
  • 80 $115.4375
$115.4375 / $135.5900 Buy Now
DISTI # FZ600R12KE4HOSA1
Avnet Americas Transistor IGBT Module N-CH 1.2kV 600A ±20V Screw Tray - Trays (Alt: FZ600R12KE4HOSA1) RoHS: Compliant Min Qty: 10 Package Multiple: 10 Lead time: 16 Weeks, 0 Days Container: Tray 0
  • 10 $140.6005
$140.6005 Buy Now
Future Electronics   RoHS: Compliant pbFree: Yes Min Qty: 10 Package Multiple: 10 Lead time: 16 Weeks Container: Tray 0
Tray
  • 10 $120.9500
$120.9500 Buy Now
DISTI # 80331284
Verical Trans IGBT Module N-CH 1200V 600A 3000W 4-Pin AG-62MM-2 Tray RoHS: Compliant Min Qty: 1 Package Multiple: 1 Americas - 10
  • 1 $168.7500
  • 5 $153.7500
  • 10 $146.2500
$146.2500 / $168.7500 Buy Now
DISTI # C1S322000658718
Chip1Stop Trans IGBT Module N-CH 1200V 600A 3000000mW Tray RoHS: Compliant pbFree: Yes Container: Tray 10
  • 1 $135.0000
  • 5 $123.0000
  • 10 $117.0000
$117.0000 / $135.0000 Buy Now
DISTI # SP000524460
EBV Elektronik Transistor IGBT Module N-CH 1.2kV 600A �20V Screw Tray (Alt: SP000524460) RoHS: Compliant Min Qty: 10 Package Multiple: 10 Lead time: 17 Weeks, 0 Days EBV - 10
Buy Now
New Advantage Corporation   RoHS: Compliant Min Qty: 1 Package Multiple: 10 10
  • 10 $186.4400
$186.4400 Buy Now

Part Details for FZ600R12KE4HOSA1

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FZ600R12KE4HOSA1 Part Data Attributes

FZ600R12KE4HOSA1 Infineon Technologies AG
Buy Now Datasheet
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FZ600R12KE4HOSA1 Infineon Technologies AG Insulated Gate Bipolar Transistor, 600A I(C), 1200V V(BR)CES, N-Channel, MODULE-5
Pbfree Code Yes
Rohs Code Yes
Part Life Cycle Code Active
Ihs Manufacturer INFINEON TECHNOLOGIES AG
Part Package Code MODULE
Package Description FLANGE MOUNT, R-XUFM-X3
Pin Count 5
Reach Compliance Code compliant
ECCN Code EAR99
Factory Lead Time 16 Weeks
Samacsys Manufacturer Infineon
Case Connection ISOLATED
Collector Current-Max (IC) 600 A
Collector-Emitter Voltage-Max 1200 V
Configuration SINGLE WITH BUILT-IN DIODE
JESD-30 Code R-XUFM-X3
Number of Elements 1
Number of Terminals 3
Operating Temperature-Max 150 °C
Package Body Material UNSPECIFIED
Package Shape RECTANGULAR
Package Style FLANGE MOUNT
Peak Reflow Temperature (Cel) NOT SPECIFIED
Polarity/Channel Type N-CHANNEL
Qualification Status Not Qualified
Surface Mount NO
Terminal Form UNSPECIFIED
Terminal Position UPPER
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Transistor Application POWER CONTROL
Transistor Element Material SILICON
Turn-off Time-Nom (toff) 810 ns
Turn-on Time-Nom (ton) 370 ns

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