Part Details for FZ400R12KE3B1 by Infineon Technologies AG
Overview of FZ400R12KE3B1 by Infineon Technologies AG
- Distributor Offerings: (2 listings)
- Number of FFF Equivalents: (0 crosses)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (0 crosses)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
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Price & Stock for FZ400R12KE3B1
Part # | Distributor | Description | Stock | Price | Buy | |
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DISTI #
FZ400R12KE3B1HOSA1
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Avnet Americas | Trans IGBT Module N-CH 1.2KV 650A 5-Pin 62MM - Trays (Alt: FZ400R12KE3B1HOSA1) RoHS: Compliant Min Qty: 10 Package Multiple: 10 Lead time: 16 Weeks, 0 Days Container: Tray | 0 |
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$154.7675 | Buy Now |
DISTI #
641-FZ400R12KE3B1
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Mouser Electronics | IGBT Modules N-CH 1.2KV 650A RoHS: Compliant | 10 |
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$132.5000 / $149.2400 | Buy Now |
Part Details for FZ400R12KE3B1
FZ400R12KE3B1 CAD Models
FZ400R12KE3B1 Part Data Attributes
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FZ400R12KE3B1
Infineon Technologies AG
Buy Now
Datasheet
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FZ400R12KE3B1
Infineon Technologies AG
Insulated Gate Bipolar Transistor, 650A I(C), 1200V V(BR)CES, N-Channel,
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Rohs Code | Yes | |
Part Life Cycle Code | Active | |
Ihs Manufacturer | INFINEON TECHNOLOGIES AG | |
Package Description | FLANGE MOUNT, R-XUFM-X5 | |
Reach Compliance Code | compliant | |
ECCN Code | EAR99 | |
Factory Lead Time | 16 Weeks | |
Samacsys Manufacturer | Infineon | |
Case Connection | ISOLATED | |
Collector Current-Max (IC) | 650 A | |
Collector-Emitter Voltage-Max | 1200 V | |
Configuration | SINGLE WITH BUILT-IN DIODE | |
Gate-Emitter Voltage-Max | 20 V | |
JESD-30 Code | R-XUFM-X5 | |
Number of Elements | 1 | |
Number of Terminals | 5 | |
Operating Temperature-Max | 150 °C | |
Package Body Material | UNSPECIFIED | |
Package Shape | RECTANGULAR | |
Package Style | FLANGE MOUNT | |
Peak Reflow Temperature (Cel) | NOT SPECIFIED | |
Polarity/Channel Type | N-CHANNEL | |
Power Dissipation-Max (Abs) | 2250 W | |
Qualification Status | Not Qualified | |
Surface Mount | NO | |
Terminal Form | UNSPECIFIED | |
Terminal Position | UPPER | |
Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED | |
Transistor Element Material | SILICON | |
Turn-off Time-Nom (toff) | 830 ns | |
Turn-on Time-Nom (ton) | 400 ns | |
VCEsat-Max | 2.15 V |