Part Details for FZ1800R17HP4B29BOSA2 by Infineon Technologies AG
Overview of FZ1800R17HP4B29BOSA2 by Infineon Technologies AG
- Distributor Offerings: (4 listings)
- Number of FFF Equivalents: (0 crosses)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (1 option)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Price & Stock for FZ1800R17HP4B29BOSA2
| Part # | Distributor | Description | Stock | Price | Buy | |
|---|---|---|---|---|---|---|
|
DISTI #
2156-FZ1800R17HP4B29BOSA2-ND
|
DigiKey | IGBT MODULE 1700V 1800A Min Qty: 1 Lead time: 20 Weeks Container: Bulk MARKETPLACE PRODUCT |
174 In Stock |
|
$1,507.0100 | Buy Now |
|
DISTI #
FZ1800R17HP4B29BOSA2-ND
|
DigiKey | IGBT MODULE 1700V 1800A Min Qty: 1 Lead time: 20 Weeks Container: Tray | Temporarily Out of Stock |
|
$1,338.2600 | Buy Now |
|
|
Rochester Electronics | FZ1800R17 - IGBT Module RoHS: Compliant Status: Active Min Qty: 1 | 174 |
|
$1,293.2800 / $1,521.5000 | Buy Now |
|
DISTI #
SP001052012
|
EBV Elektronik | IGBTs (Alt: SP001052012) RoHS: Compliant Min Qty: 1 Package Multiple: 1 Lead time: 21 Weeks, 0 Days | EBV - 0 |
|
Buy Now |
Part Details for FZ1800R17HP4B29BOSA2
FZ1800R17HP4B29BOSA2 CAD Models
FZ1800R17HP4B29BOSA2 Part Data Attributes:
|
|
FZ1800R17HP4B29BOSA2
Infineon Technologies AG
Buy Now
Datasheet
|
Compare Parts:
FZ1800R17HP4B29BOSA2
Infineon Technologies AG
Insulated Gate Bipolar Transistor,
|
| Pbfree Code | Yes | |
| Rohs Code | Yes | |
| Part Life Cycle Code | Active | |
| Ihs Manufacturer | INFINEON TECHNOLOGIES AG | |
| Reach Compliance Code | not_compliant | |
| ECCN Code | EAR99 | |
| Factory Lead Time | 20 Weeks | |
| Case Connection | ISOLATED | |
| Collector-Emitter Voltage-Max | 1700 V | |
| Gate-Emitter Thr Voltage-Max | 6.4 V | |
| Gate-Emitter Voltage-Max | 20 V | |
| Moisture Sensitivity Level | 1 | |
| Operating Temperature-Max | 150 °C | |
| Operating Temperature-Min | -40 °C | |
| Peak Reflow Temperature (Cel) | NOT SPECIFIED | |
| Polarity/Channel Type | N-Channel | |
| Power Dissipation-Max (Abs) | 11500 W | |
| Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED | |
| Transistor Element Material | SILICON | |
| Turn-off Time-Nom (toff) | 1860 ns | |
| Turn-on Time-Nom (ton) | 880 ns | |
| VCEsat-Max | 2.25 V |
Alternate Parts for FZ1800R17HP4B29BOSA2
This table gives cross-reference parts and alternative options found for FZ1800R17HP4B29BOSA2. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of FZ1800R17HP4B29BOSA2, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
| Part Number | Description | Manufacturer | Compare |
|---|---|---|---|
| FZ1800R17KE3B2NOSA1 | Insulated Gate Bipolar Transistor, 2850A I(C), 1700V V(BR)CES, N-Channel, MODULE-9 | Infineon Technologies AG | FZ1800R17HP4B29BOSA2 vs FZ1800R17KE3B2NOSA1 |