Part Details for FZ1800R12HE4B9HOSA2 by Infineon Technologies AG
Overview of FZ1800R12HE4B9HOSA2 by Infineon Technologies AG
- Distributor Offerings: (4 listings)
- Number of FFF Equivalents: (2 crosses)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (0 crosses)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Price & Stock for FZ1800R12HE4B9HOSA2
Part # | Distributor | Description | Stock | Price | Buy | |
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DISTI #
448-FZ1800R12HE4B9HOSA2-ND
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DigiKey | IGBT MODULE 1200V 2735A Min Qty: 1 Lead time: 14 Weeks Container: Tray | Temporarily Out of Stock |
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$873.9910 / $905.5800 | Buy Now |
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Future Electronics | RoHS: Compliant pbFree: Yes Min Qty: 1 Package Multiple: 1 Container: Tray | 0Tray |
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$965.3500 | Buy Now |
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Rochester Electronics | FZ1800R12HE4_B9 - PP, IHM I, XHP 1,7KV RoHS: Compliant Status: Active Min Qty: 1 | 1 |
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$861.5700 / $1,013.6100 | Buy Now |
DISTI #
SP001172166
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EBV Elektronik | Trans IGBT Module N-CH 1.2KV 2.375KA IHMB190 (Alt: SP001172166) RoHS: Compliant Min Qty: 1 Package Multiple: 1 Lead time: 15 Weeks, 0 Days | EBV - 0 |
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Buy Now |
Part Details for FZ1800R12HE4B9HOSA2
FZ1800R12HE4B9HOSA2 CAD Models
FZ1800R12HE4B9HOSA2 Part Data Attributes:
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FZ1800R12HE4B9HOSA2
Infineon Technologies AG
Buy Now
Datasheet
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Compare Parts:
FZ1800R12HE4B9HOSA2
Infineon Technologies AG
Insulated Gate Bipolar Transistor, 2735A I(C), 1200V V(BR)CES, N-Channel, MODULE-9
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Rohs Code | Yes | |
Part Life Cycle Code | Not Recommended | |
Ihs Manufacturer | INFINEON TECHNOLOGIES AG | |
Package Description | FLANGE MOUNT, R-PUFM-X9 | |
Reach Compliance Code | not_compliant | |
ECCN Code | EAR99 | |
Factory Lead Time | 39 Weeks | |
Case Connection | ISOLATED | |
Collector Current-Max (IC) | 2735 A | |
Collector-Emitter Voltage-Max | 1200 V | |
Configuration | COMPLEX | |
JESD-30 Code | R-PUFM-X9 | |
Moisture Sensitivity Level | 1 | |
Number of Elements | 3 | |
Number of Terminals | 9 | |
Package Body Material | PLASTIC/EPOXY | |
Package Shape | RECTANGULAR | |
Package Style | FLANGE MOUNT | |
Peak Reflow Temperature (Cel) | NOT SPECIFIED | |
Polarity/Channel Type | N-CHANNEL | |
Reference Standard | UL APPROVED | |
Surface Mount | NO | |
Terminal Form | UNSPECIFIED | |
Terminal Position | UPPER | |
Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED | |
Transistor Application | POWER CONTROL | |
Transistor Element Material | SILICON | |
Turn-off Time-Nom (toff) | 1160 ns | |
Turn-on Time-Nom (ton) | 720 ns |
Alternate Parts for FZ1800R12HE4B9HOSA2
This table gives cross-reference parts and alternative options found for FZ1800R12HE4B9HOSA2. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of FZ1800R12HE4B9HOSA2, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
Part Number | Description | Manufacturer | Compare |
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FZ1800R12HE4_B9 | Insulated Gate Bipolar Transistor, 2735A I(C), 1200V V(BR)CES, N-Channel, MODULE-9 | Infineon Technologies AG | FZ1800R12HE4B9HOSA2 vs FZ1800R12HE4_B9 |
FZ1800R12HE4B9NPSA1 | Insulated Gate Bipolar Transistor, 2735A I(C), 1200V V(BR)CES, N-Channel, MODULE-9 | Infineon Technologies AG | FZ1800R12HE4B9HOSA2 vs FZ1800R12HE4B9NPSA1 |