Transistors
FZ1600R17HP4_B2
Infineon Technologies AG
Description: Insulated Gate Bipolar Transistor, 1600A I(C), 1700V V(BR)CES, N-Channel, MODULE-7

Overview of FZ1600R17HP4_B2 by Infineon Technologies AG

Note: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Where used in Applications: Energy and Power Systems Renewable Energy

Price & Stock for FZ1600R17HP4_B2 by Infineon Technologies AG

Part # Manufacturer Description Stock Price Buy
DISTI # 641-FZ1600R17HP4_B2
Mouser Electronics IGBT Modules IGBT 1700V 1600A RoHS: Compliant 5
  • 1 $986.4500
$986.4500 Buy Now
DISTI # SP000614336
EBV Elektronik Trans IGBT Module N-CH 1.7KV 1600A 7-pin IHMB130-1 (Alt: SP000614336) RoHS: Compliant Min Qty: 2 Package Multiple: 2 Lead time: 26 Weeks, 0 Days EBV - 0
Buy Now

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Part Data Attributes for FZ1600R17HP4_B2 by Infineon Technologies AG

FZ1600R17HP4_B2
Infineon Technologies AG
-
-
Pbfree Code
No
Rohs Code
Yes
Part Life Cycle Code
Active
Ihs Manufacturer
INFINEON TECHNOLOGIES AG
Part Package Code
MODULE
Package Description
MODULE-7
Pin Count
7
Reach Compliance Code
not_compliant
ECCN Code
EAR99
Samacsys Manufacturer
Infineon
Case Connection
ISOLATED
Collector Current-Max (IC)
1600 A
Collector-Emitter Voltage-Max
1700 V
Configuration
COMPLEX
Gate-Emitter Voltage-Max
20 V
JESD-30 Code
R-XUFM-X7
Moisture Sensitivity Level
1
Number of Elements
2
Number of Terminals
7
Operating Temperature-Max
150 °C
Package Body Material
UNSPECIFIED
Package Shape
RECTANGULAR
Package Style
FLANGE MOUNT
Peak Reflow Temperature (Cel)
NOT SPECIFIED
Polarity/Channel Type
N-CHANNEL
Power Dissipation-Max (Abs)
11000 W
Qualification Status
Not Qualified
Surface Mount
NO
Terminal Form
UNSPECIFIED
Terminal Position
UPPER
Time@Peak Reflow Temperature-Max (s)
NOT SPECIFIED
Transistor Application
POWER CONTROL
Transistor Element Material
SILICON
Turn-off Time-Nom (toff)
1710 ns
Turn-on Time-Nom (ton)
805 ns
VCEsat-Max
2.25 V
Want to compare parts?
  1. FZ1600R17HP4_B2
    Infineon Technologies AG
    Insulated Gate Bipolar Transistor, 1600A I(C), 1700V V(BR)CES, N-Channel, MODULE-7
    VS

Alternate Parts for FZ1600R17HP4_B2

This table gives cross-reference parts and alternative options found for FZ1600R17HP4_B2. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of FZ1600R17HP4_B2, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
Part Number Description Manufacturer Compare
FZ1600R17HP4B21BOSA2 Insulated Gate Bipolar Transistor, 1700V V(BR)CES, N-Channel, MODULE-7 Infineon Technologies AG FZ1600R17HP4_B2 vs FZ1600R17HP4B21BOSA2
FZ1600R17HP4B2BOSA2 Insulated Gate Bipolar Transistor, Infineon Technologies AG FZ1600R17HP4_B2 vs FZ1600R17HP4B2BOSA2
FZ1600R17HP4B21BOSA1 Insulated Gate Bipolar Transistor Infineon Technologies AG FZ1600R17HP4_B2 vs FZ1600R17HP4B21BOSA1
FZ1600R17HP4_B21 Insulated Gate Bipolar Transistor Infineon Technologies AG FZ1600R17HP4_B2 vs FZ1600R17HP4_B21
FZ1600R17HP4NPSA1 Insulated Gate Bipolar Transistor, 1700V V(BR)CES, N-Channel, MODULE-7 Infineon Technologies AG FZ1600R17HP4_B2 vs FZ1600R17HP4NPSA1
FZ1600R17HP4B2BOSA1 Insulated Gate Bipolar Transistor, 1700V V(BR)CES, N-Channel, MODULE-7 Infineon Technologies AG FZ1600R17HP4_B2 vs FZ1600R17HP4B2BOSA1

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