Datasheets
FW206 by:

Power Field-Effect Transistor, 5A I(D), 30V, 0.12ohm, N-Channel, Silicon, Metal-oxide Semiconductor FET, SOP-8

Part Details for FW206 by SANYO Electric Co Ltd

Overview of FW206 by SANYO Electric Co Ltd

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Part Details for FW206

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FW206 Part Data Attributes

FW206 SANYO Electric Co Ltd
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FW206 SANYO Electric Co Ltd Power Field-Effect Transistor, 5A I(D), 30V, 0.12ohm, N-Channel, Silicon, Metal-oxide Semiconductor FET, SOP-8
Part Life Cycle Code Obsolete
Ihs Manufacturer SANYO ELECTRIC CO LTD
Part Package Code SOT
Package Description SMALL OUTLINE, R-PDSO-G8
Pin Count 8
Reach Compliance Code unknown
ECCN Code EAR99
DS Breakdown Voltage-Min 30 V
Drain Current-Max (ID) 5 A
Drain-source On Resistance-Max 0.12 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR
JESD-30 Code R-PDSO-G8
Number of Terminals 8
Operating Mode ENHANCEMENT MODE
Operating Temperature-Max 150 °C
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style SMALL OUTLINE
Polarity/Channel Type N-CHANNEL
Power Dissipation-Max (Abs) 2 W
Qualification Status Not Qualified
Surface Mount YES
Terminal Form GULL WING
Terminal Position DUAL
Transistor Application SWITCHING
Transistor Element Material SILICON

Alternate Parts for FW206

This table gives cross-reference parts and alternative options found for FW206. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of FW206, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.

Part Number Manufacturer Composite Price Description Compare
IRF7403PBF Infineon Technologies AG Check for Price Power Field-Effect Transistor, 8.5A I(D), 30V, 0.022ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA, LEAD FREE, SO-8 FW206 vs IRF7403PBF
FDS9936A Fairchild Semiconductor Corporation Check for Price Power Field-Effect Transistor, 5.5A I(D), 30V, 0.04ohm, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, SOIC-8 FW206 vs FDS9936A
HUF76105DK8T136 Fairchild Semiconductor Corporation Check for Price Power Field-Effect Transistor, 5A I(D), 30V, 0.072ohm, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA, SOIC-8 FW206 vs HUF76105DK8T136
PHN210T Nexperia Check for Price Power Field-Effect Transistor FW206 vs PHN210T
IRF7403 Infineon Technologies AG Check for Price Power Field-Effect Transistor, 6.7A I(D), 30V, 0.022ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA, FW206 vs IRF7403
F3H3ND Shindengen Electronic Manufacturing Co Ltd Check for Price Power Field-Effect Transistor, 3A I(D), 30V, 0.16ohm, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET FW206 vs F3H3ND
934055451118 Nexperia Check for Price Power Field-Effect Transistor FW206 vs 934055451118
IRF7205 International Rectifier Check for Price Power Field-Effect Transistor, 4.6A I(D), 30V, 0.07ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, FW206 vs IRF7205
BSO303SPH Infineon Technologies AG Check for Price Power Field-Effect Transistor, 7.2A I(D), 30V, 0.021ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, GREEN, PLASTIC, SOP-8 FW206 vs BSO303SPH
PHN210 NXP Semiconductors Check for Price TRANSISTOR 3.4 A, 30 V, 0.1 ohm, 2 CHANNEL, N-CHANNEL, Si, POWER, MOSFET, MS-012AA, PLASTIC, SO-8, FET General Purpose Power FW206 vs PHN210

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