Datasheets
FSYC163D1 by:

Power Field-Effect Transistor, 62A I(D), 130V, 0.03ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, SMD2, 3 PIN

Part Details for FSYC163D1 by Fairchild Semiconductor Corporation

Overview of FSYC163D1 by Fairchild Semiconductor Corporation

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Applications Consumer Electronics Education and Research Audio and Video Systems Healthcare

Part Details for FSYC163D1

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FSYC163D1 Part Data Attributes

FSYC163D1 Fairchild Semiconductor Corporation
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FSYC163D1 Fairchild Semiconductor Corporation Power Field-Effect Transistor, 62A I(D), 130V, 0.03ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, SMD2, 3 PIN
Rohs Code No
Part Life Cycle Code Transferred
Ihs Manufacturer FAIRCHILD SEMICONDUCTOR CORP
Package Description CHIP CARRIER, R-CBCC-N3
Pin Count 3
Reach Compliance Code compliant
ECCN Code EAR99
Case Connection DRAIN
Configuration SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 130 V
Drain Current-Max (ID) 62 A
Drain-source On Resistance-Max 0.03 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR
JESD-30 Code R-CBCC-N3
JESD-609 Code e0
Number of Elements 1
Number of Terminals 3
Operating Mode ENHANCEMENT MODE
Operating Temperature-Max 150 °C
Package Body Material CERAMIC, METAL-SEALED COFIRED
Package Shape RECTANGULAR
Package Style CHIP CARRIER
Polarity/Channel Type N-CHANNEL
Power Dissipation-Max (Abs) 83 W
Pulsed Drain Current-Max (IDM) 186 A
Qualification Status Not Qualified
Surface Mount YES
Terminal Finish Tin/Lead (Sn/Pb)
Terminal Form NO LEAD
Terminal Position BOTTOM
Transistor Application SWITCHING
Transistor Element Material SILICON

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