Datasheets
FSS23A4R3 by:
Fairchild Semiconductor Corporation
Fairchild Semiconductor Corporation
Harris Semiconductor
International Rectifier
Intersil Corporation
Not Found

Power Field-Effect Transistor, 7A I(D), 250V, 0.46ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-257AA,

Part Details for FSS23A4R3 by Fairchild Semiconductor Corporation

Results Overview of FSS23A4R3 by Fairchild Semiconductor Corporation

Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.

Applications Education and Research Internet of Things (IoT) Computing and Data Storage Aerospace and Defense Healthcare Telecommunications Automotive

FSS23A4R3 Information

FSS23A4R3 by Fairchild Semiconductor Corporation is a Power Field-Effect Transistor.
Power Field-Effect Transistors are under the broader part category of Transistors.

A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.

Part Details for FSS23A4R3

FSS23A4R3 CAD Models

There are no models available for this part yet.

Sign in to request this CAD model.

Register or Sign In

FSS23A4R3 Part Data Attributes

FSS23A4R3 Fairchild Semiconductor Corporation
Buy Now Datasheet
Compare Parts:
FSS23A4R3 Fairchild Semiconductor Corporation Power Field-Effect Transistor, 7A I(D), 250V, 0.46ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-257AA,
Select a part to compare:
Rohs Code No
Part Life Cycle Code Transferred
Ihs Manufacturer FAIRCHILD SEMICONDUCTOR CORP
Reach Compliance Code compliant
ECCN Code EAR99
Case Connection ISOLATED
Configuration SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 250 V
Drain Current-Max (ID) 7 A
Drain-source On Resistance-Max 0.46 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR
JEDEC-95 Code TO-257AA
JESD-30 Code R-MSFM-P3
JESD-609 Code e0
Number of Elements 1
Number of Terminals 3
Operating Mode ENHANCEMENT MODE
Operating Temperature-Max 150 °C
Package Body Material METAL
Package Shape RECTANGULAR
Package Style FLANGE MOUNT
Polarity/Channel Type N-CHANNEL
Power Dissipation-Max (Abs) 22 W
Pulsed Drain Current-Max (IDM) 21 A
Qualification Status Not Qualified
Surface Mount NO
Terminal Finish Tin/Lead (Sn/Pb)
Terminal Form PIN/PEG
Terminal Position SINGLE
Transistor Application SWITCHING
Transistor Element Material SILICON

Alternate Parts for FSS23A4R3

This table gives cross-reference parts and alternative options found for FSS23A4R3. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of FSS23A4R3, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.

Part Number Manufacturer Composite Price Description Compare
FSS23A4R3 Intersil Corporation Check for Price 7A, 250V, 0.46ohm, N-CHANNEL, Si, POWER, MOSFET, TO-257AA, HERMETIC SEALED, METAL, TO-257AA, 3 PIN FSS23A4R3 vs FSS23A4R3
FSS23A4R3 International Rectifier Check for Price Power Field-Effect Transistor, 7A I(D), 250V, 0.46ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-257AA FSS23A4R3 vs FSS23A4R3