Part Details for FSS23A0R3 by Fairchild Semiconductor Corporation
Overview of FSS23A0R3 by Fairchild Semiconductor Corporation
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Part Details for FSS23A0R3
FSS23A0R3 CAD Models
FSS23A0R3 Part Data Attributes
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FSS23A0R3
Fairchild Semiconductor Corporation
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FSS23A0R3
Fairchild Semiconductor Corporation
Power Field-Effect Transistor, 9A I(D), 200V, 0.33ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-257AA,
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Rohs Code | No | |
Part Life Cycle Code | Transferred | |
Ihs Manufacturer | FAIRCHILD SEMICONDUCTOR CORP | |
Package Description | FLANGE MOUNT, R-MSFM-P3 | |
Reach Compliance Code | compliant | |
ECCN Code | EAR99 | |
Case Connection | ISOLATED | |
Configuration | SINGLE WITH BUILT-IN DIODE | |
DS Breakdown Voltage-Min | 200 V | |
Drain Current-Max (ID) | 9 A | |
Drain-source On Resistance-Max | 0.33 Ω | |
FET Technology | METAL-OXIDE SEMICONDUCTOR | |
JEDEC-95 Code | TO-257AA | |
JESD-30 Code | R-MSFM-P3 | |
JESD-609 Code | e0 | |
Number of Elements | 1 | |
Number of Terminals | 3 | |
Operating Mode | ENHANCEMENT MODE | |
Operating Temperature-Max | 150 °C | |
Package Body Material | METAL | |
Package Shape | RECTANGULAR | |
Package Style | FLANGE MOUNT | |
Polarity/Channel Type | N-CHANNEL | |
Power Dissipation-Max (Abs) | 22 W | |
Pulsed Drain Current-Max (IDM) | 27 A | |
Qualification Status | Not Qualified | |
Surface Mount | NO | |
Terminal Finish | Tin/Lead (Sn/Pb) | |
Terminal Form | PIN/PEG | |
Terminal Position | SINGLE | |
Transistor Application | SWITCHING | |
Transistor Element Material | SILICON |