Datasheets
FSS133 by:

Power Field-Effect Transistor, 8A I(D), 20V, 0.024ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, SOP-8

Part Details for FSS133 by SANYO Electric Co Ltd

Overview of FSS133 by SANYO Electric Co Ltd

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Applications Space Technology Environmental Monitoring Internet of Things (IoT) Smart Cities Agriculture Technology Virtual Reality (VR), Augmented Reality (AR), and Vision Systems Medical Imaging Consumer Electronics Education and Research Security and Surveillance Aerospace and Defense Healthcare Robotics and Drones

Part Details for FSS133

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FSS133 Part Data Attributes

FSS133 SANYO Electric Co Ltd
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FSS133 SANYO Electric Co Ltd Power Field-Effect Transistor, 8A I(D), 20V, 0.024ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, SOP-8
Part Life Cycle Code Obsolete
Ihs Manufacturer SANYO ELECTRIC CO LTD
Part Package Code SOT
Package Description SMALL OUTLINE, R-PDSO-G8
Pin Count 8
Reach Compliance Code unknown
ECCN Code EAR99
Configuration SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 20 V
Drain Current-Max (ID) 8 A
Drain-source On Resistance-Max 0.024 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR
JESD-30 Code R-PDSO-G8
Number of Elements 1
Number of Terminals 8
Operating Mode ENHANCEMENT MODE
Operating Temperature-Max 150 °C
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style SMALL OUTLINE
Polarity/Channel Type P-CHANNEL
Power Dissipation-Max (Abs) 1.8 W
Pulsed Drain Current-Max (IDM) 52 A
Qualification Status Not Qualified
Surface Mount YES
Terminal Form GULL WING
Terminal Position DUAL
Transistor Application SWITCHING
Transistor Element Material SILICON

Alternate Parts for FSS133

This table gives cross-reference parts and alternative options found for FSS133. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of FSS133, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.

Part Number Description Manufacturer Compare
FTS1011 Power Field-Effect Transistor, 6A I(D), 20V, 0.033ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TSSOP-8 SANYO Electric Co Ltd FSS133 vs FTS1011
ECH8301 Power Field-Effect Transistor, 8A I(D), 20V, 0.024ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, ECH8, 8 PIN SANYO Semiconductor Co Ltd FSS133 vs ECH8301
Part Number Description Manufacturer Compare
FSS139 Power Field-Effect Transistor, 4A I(D), 20V, 0.078ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, SOP-8 SANYO Semiconductor Co Ltd FSS133 vs FSS139
FTS1011 Power Field-Effect Transistor, 6A I(D), 20V, 0.033ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TSSOP-8 SANYO Electric Co Ltd FSS133 vs FTS1011
HAT1021R 5.5A, 20V, 0.085ohm, P-CHANNEL, Si, POWER, MOSFET, MS-012AA, FP-8DA, SOP-8 Renesas Electronics Corporation FSS133 vs HAT1021R
ECH8301 Power Field-Effect Transistor, 8A I(D), 20V, 0.024ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, ECH8, 8 PIN SANYO Semiconductor Co Ltd FSS133 vs ECH8301
FSS139 Power Field-Effect Transistor, 4A I(D), 20V, 0.078ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, SOP-8 SANYO Electric Co Ltd FSS133 vs FSS139
HAT1023R Power Field-Effect Transistor, 7A I(D), 20V, 0.06ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA, SO-8 Hitachi Ltd FSS133 vs HAT1023R

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